Journal ArticleDOI
High-Voltage (2.8 kV) Implantation-Free 4H-SiC BJTs With Long-Term Stability of the Current Gain
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In this article, implantation-free 4H-SiC bipolar junction transistors (BJTs) with a high breakdown voltage of 2800 V have been fabricated by utilizing a controlled two-step etched junctiontermination extension in the epitaxial base layer.Abstract:
In this paper, implantation-free 4H-SiC bipolar junction transistors (BJTs) with a high breakdown voltage of 2800 V have been fabricated by utilizing a controlled two-step etched junction-termination extension in the epitaxial base layer. The small-area device shows a maximum direct-current (dc) gain of 55 at JC = 0.33 A (JC = 825 A/cm2) and VCESAT = 1.05 V at Ic = 0.107 A that corresponds to a low specific ON-state resistance of 4 mΩ · cm2. The large-area device has a maximum dc gain of 52 at JC = 9.36 A (JC = 289 A/cm2) and VCESAT = 1-14 V at Ic = 5 A that corresponds to a specific ON-state resistance of 6.8 mΩ · cm2. In addition, these devices demonstrate a negative temperature coefficient of the current gain (β = 26 at 200 °C) and a positive temperature coefficient of the specific ON-state resistance (RON = 10.2 mΩ · cm2 at 200 °C). The small-area BJT shows no bipolar degradation and a low-current-gain degradation after a 150-h stress of the base-emitter diode with a current level of 0.2 A (JE = 500 A/cm2). Furthermore, the large-area BJT shows a VCE fall time of 18 ns during turn-on and a VCE rise time of 10 ns during turn-off for 400-V switching characteristics.read more
Citations
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Journal ArticleDOI
High Performance Vertical GaN-on-GaN p-n Power Diodes With Hydrogen-Plasma-Based Edge Termination
Houqiang Fu,Kai Fu,Xuanqi Huang,Hong Chen,Izak Baranowski,Tsung-Han Yang,Jossue Montes,Yuji Zhao +7 more
TL;DR: In this article, the first implementation of a hydrogen-plasma-based edge termination technique (HPET) in vertical GaN p-n power diodes grown on bulk GaN substrates using metalorganic chemical vapor deposition was reported.
Journal ArticleDOI
15 kV-Class Implantation-Free 4H-SiC BJTs With Record High Current Gain
TL;DR: In this paper, a mesa-etched ultra-high-voltage (0.08 mm2) 4H-SiC bipolar junction transistors with record current gain of 139 were fabricated, measured, and analyzed by device simulation.
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Vertical GaN Power Devices: Device Principles and Fabrication Technologies—Part II
TL;DR: In this paper, a comprehensive review summarizes the current progress, understanding, and challenges in vertical GaN power devices, which can serve as not only a gateway for those interested in the field but also a critical reference for researchers in the wide bandgap semiconductor and power electronics community.
Journal ArticleDOI
5.8-kV Implantation-Free 4H-SiC BJT With Multiple-Shallow-Trench Junction Termination Extension
TL;DR: In this article, an implantation-free 4H-SiC bipolar junction transistors with multiple-shallow-trench junction termination extension have been fabricated and a specific on-resistance (R_{\mathrm{{\scriptstyle ON}}}$ ) of 28 m $\Omega \cdot {\rm cm^{2}}$ was obtained.
Journal ArticleDOI
Review of Silicon Carbide Processing for Power MOSFET
Catherine Langpoklakpam,An Chen Liu,Kuo-Hsiung Chu,Lung Hsing Hsu,Wen-Chung Lee,Shih Chen Chen,Chia-Wei Sun,Min-Hsiung Shih,Kunghong Lee,Hao-Chung Kuo +9 more
TL;DR: A general review of the critical processing steps for manufacturing silicon carbide (SiC) MOSFETs and power applications based on SiC power devices are covered in this article . But, the reliability issues of SiC MOS FETs are also briefly summarized.
References
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Journal ArticleDOI
Excellent reverse blocking characteristics of high-voltage 4H-SiC Schottky rectifiers with boron-implanted edge termination
TL;DR: In this paper, the edge termination of Ti/4H-SiC Schottky rectifiers was successfully fabricated by using highly resistive layers at the periphery of Schotty contacts, which were formed by B/sup +/ implantation followed by heat treatment to improve the crystallinity of implanted layers.
Journal ArticleDOI
1000-V, 30-A 4H-SiC BJTs with high current gain
S. Krishnaswami,Anant K. Agarwal,Sei-Hyung Ryu,Craig Capell,Jim Richmond,John W. Palmour,S. Balachandran,T.P. Chow,Stephen B. Bayne,Bruce Geil,Kenneth A. Jones,Charles Scozzie +11 more
TL;DR: In this paper, a 1000 V, 30A bipolar junction transistor (BJT) with high dc current gain in 4H-SiC was presented, which corresponds to a current density of 333 A/cm/sup 2/, at a forward voltage drop of 2 V.
Journal ArticleDOI
Surface-Passivation Effects on the Performance of 4H-SiC BJTs
Reza Ghandi,Benedetto Buono,Martin Domeij,Romain Esteve,Adolf Schöner,Jisheng Han,Sima Dimitrijev,Sergey A. Reshanov,C.-M. Zetterling,Mikael Östling +9 more
TL;DR: In this article, the performance of bipolar junction transistor (BJT) is compared experimentally and by device simulation for 4H-SiC BJTs passivated with different surface passivation layers.
Journal ArticleDOI
High-Voltage 4H-SiC PiN Diodes With Etched Junction Termination Extension
TL;DR: In this paper, mesa-etched 4H-SiC PiN diodes with a near-ideal breakdown voltage of 4.3 kV were fabricated, measured, and analyzed by device simulation and optical imaging measurements at breakdown.
Journal ArticleDOI
Geometrical effects in high current gain 1100-V 4H-SiC BJTs
Martin Domeij,Hyung-Seok Lee,Erik Danielsson,Carl-Mikael Zetterling,Mikael Östling,Adolf Schöner +5 more
TL;DR: In this article, the fabrication of epitaxial 4H-SiC bipolar junction transistors (BJTs) with a maximum current gain /spl beta/=64 and a breakdown voltage of 1100 V was reported.