Journal ArticleDOI
Magnetoresistive random access memory using magnetic tunnel junctions
Saied N. Tehrani,Jon M. Slaughter,M. DeHerrera,B.N. Engel,Nicholas D. Rizzo,J. Salter,M. Durlam,Renu W. Dave,J. Janesky,Brian R. Butcher,K. Smith,Gregory W. Grynkewich +11 more
- Vol. 91, Iss: 5, pp 703-714
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TLDR
How the memory operates is described, including significant aspects of reading, writing, and integration of the magnetic material with CMOS, which enabled the recent demonstration of a 1-Mbit memory chip.Abstract:
Magnetoresistive random access memory (MRAM) technology combines a spintronic device with standard silicon-based microelectronics to obtain a combination of attributes not found in any other memory technology. Key attributes of MRAM technology are nonvolatility and unlimited read and write endurance. Magnetic tunnel junction (MTJ) devices have several advantages over other magnetoresistive devices for use in MRAM cells, such as a large signal for the read operation and a resistance that can be tailored to the circuit. Due to these attributes, MTJ MRAM can operate at high speed and is expected to have competitive densities when commercialized. In this paper, we review our recent progress in the development of MTJ-MRAM technology. We describe how the memory operates, including significant aspects of reading, writing, and integration of the magnetic material with CMOS, which enabled our recent demonstration of a 1-Mbit memory chip. Important memory attributes are compared between MRAM and other memory technologies.read more
Citations
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Exchange bias in nanostructures
Josep Nogués,Jordi Sort,V. Langlais,Vassil Skumryev,Santiago Suriñach,J.S. Muñoz,Maria Dolors Baró +6 more
TL;DR: The phenomenology of exchange bias and related effects in nanostructures is reviewed in this paper, where the main applications of exchange biased nanostructure are summarized and the implications of the nanometer dimensions on some of the existing exchange bias theories are briefly discussed.
Journal ArticleDOI
Content-addressable memory (CAM) circuits and architectures: a tutorial and survey
K. Pagiamtzis,Ali Sheikholeslami +1 more
TL;DR: This paper surveys recent developments in the design of large-capacity content-addressable memory (CAM) and reviews CAM-design techniques at the circuit level and at the architectural level.
Journal ArticleDOI
Low-cost and nanoscale non-volatile memory concept for future silicon chips.
TL;DR: The feasibility of a new semiconductor memory concept that promises that integration into a logic complementary metal oxide semiconductor (CMOS) process flow might be possible with only a few additional lithographic steps is demonstrated.
Journal ArticleDOI
Colloquium: Opportunities in nanomagnetism
TL;DR: Nanomagnetism is the discipline dealing with magnetic phenomena specific to structures having dimensions in the submicron range as discussed by the authors, and it shares many of the same basic organizing principles such as geometric confinement, physical proximity and chemical self-organization.
Journal ArticleDOI
Magnetic tunnel junctions
Jian-Gang Zhu,Chando Park +1 more
TL;DR: A brief overview of the development of magnetic tunnel junctions, introducing the underlying physics, is given in this paper, where read sensors in hard disk drives and memory elements in magnetoresistive random access memory are discussed.
References
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