Journal ArticleDOI
Nanowire-based programmable architectures
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TLDR
This work develops nanowire-based architectures which can bridge between lithographic and atomic-scale feature sizes and tolerate defective and stochastic assembly of regular arrays to deliver high density universal computing devices.Abstract:
Chemists can now construct wires which are just a few atoms in diameter; these wires can be selectively field-effect gated, and wire crossings can act as diodes with programmable resistance. These new capabilities present both opportunities and challenges for constructing nanoscale computing systems. The tiny feature sizes offer a path to economically scale down to atomic dimensions. However, the associated bottom-up synthesis techniques only produce highly regular structures and come with high defect rates and minimal control during assembly. To exploit these technologies, we develop nanowire-based architectures which can bridge between lithographic and atomic-scale feature sizes and tolerate defective and stochastic assembly of regular arrays to deliver high density universal computing devices. Using 10nm pitch nanowires, these nanowire-based programmable architectures offer one to two orders of magnitude greater mapped-logic density than defect-free lithographic FPGAs at 22nm.read more
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References
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Nanoscale molecular-switch devices fabricated by imprint lithography
Yong Chen,Douglas A. A. Ohlberg,Xuema Li,Duncan Stewart,R. Stanley Williams,Jan O. Jeppesen,Jan O. Jeppesen,Kent A. Nielsen,Kent A. Nielsen,J. Fraser Stoddart,Deirdre L. Olynick,Erik H. Anderson +11 more
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Proceedings ArticleDOI
Directional and single-driver wires in FPGA interconnect
TL;DR: This work advocates the need for this shift to single-driver wiring by investigating the necessary architectural and circuit design changes and it is shown that larger circuits tend to realize larger savings.
Journal ArticleDOI
Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001)
Yong Chen,Douglas A. A. Ohlberg,Gilberto Medeiros-Ribeiro,Y. Austin Chang,R. Stanley Williams +4 more
TL;DR: ErSi2 nanowires are less than one nanometer high, a few nanometers wide, close to a micron long, crystallographically aligned to 〈110〉Si directions, straight, and atomically regular.
Journal ArticleDOI
Templated surface sol-gel synthesis of SiO2 nanotubes and SiO2-insulated metal nanowires
Journal ArticleDOI
Stochastic assembly of sublithographic nanoscale interfaces
TL;DR: It is shown that if coded nanowires are chosen at random from a sufficiently large population, it can ensure that a large fraction of the selectednanowires have unique addresses and an O(N/sup 2/) procedure to discover the addresses which are present is given.