Journal ArticleDOI
Performance of thin hydrogenated amorphous silicon thin‐film transistors
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TLDR
In this article, the influence of the mask channel length (LM) on the performance of the 55nm−hydrogenated amorphous silicon (a−Si:H) thin-film transistors was analyzed.Abstract:
In this paper we have analyzed the influence of the mask channel length (LM) on the performance of the 55‐nm‐hydrogenated amorphous silicon (a‐Si:H) thin‐film transistors (TFTs), incorporating nitrogen‐rich hydrogenated amorphous silicon nitride gate dielectric and phosphorus‐doped microcrystalline silicon (n+μc‐Si:H) source/drain (S/D) contacts. In our TFTs the n+μc‐Si:H S/D contacts have a specific contact resistance around or below 0.5 Ω cm2. We have shown that in our TFTs a field‐effect mobility and threshold voltage are dependent on LM, and this dependence is most likely due to the influence of the S/D contact series resistance on TFTs characteristics. Finally, we have demonstrated that if the mask channel length is extended by a ΔL (which is a distance from the S/D via edge at which the electron injection/collection is taking place) the field‐effect mobility and threshold voltage are independent of the channel length. In such a case μFE, VT, and ON/OFF current ratio around 0.76 cm2/V s, 2.5 V, and 1...read more
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References
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Journal ArticleDOI
Space-Charge-Limited Currents in Solids
TL;DR: The presence of traps not only reduces the magnitude of space-charge-limited currents, but also is likely to distort the shape of the currentvoltage curve from an ideal square law to a much higher power dependence on voltage.
Journal ArticleDOI
The physics of amorphous-silicon thin-film transistors
TL;DR: In this paper, the basic physics underlying the operation and key performance issues of amorphous-silicon thin-film transistors are discussed, and the transistors also show longer time threshold voltage shifts due to two distinct mechanisms: charge trapping in the silicon nitride gate insulator and metastable dangling bond state creation.
Journal ArticleDOI
A New Method to Determine Effective MOSFET Channel Length
Kazuo Terada,Hiroki Muta +1 more
TL;DR: In this paper, an accurate and convenient method to determine an effective MOSFET channel length is proposed based on a computer aided evaluation of an intrinsic channel resistance without using special test devices.
Journal ArticleDOI
Gate dielectric and contact effects in hydrogenated amorphous silicon‐silicon nitride thin‐film transistors
Naftali E. Lustig,Jerzy Kanicki +1 more
TL;DR: In this paper, the characteristics of glow-discharge hydrogenated amorphous silicon-silicon nitride (Si:H/a−SiNx:H) thin-film transistors (TFTs) are reported for various deposition conditions.
Journal ArticleDOI
Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride films
TL;DR: In this article, the stability of silicon-rich silicon nitride films of various stoichiometries has been explored and it is argued that the dominant defects are silicon dangling bonds which can trap either electrons or holes.