Journal ArticleDOI
Piezoelectric-on-Silicon Lateral Bulk Acoustic Wave Micromechanical Resonators
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TLDR
In this article, the design, fabrication, and characterization of piezoelectrically-transduced micromechanical single-crystal-silicon resonators operating in their lateral bulk acoustic modes to address the need for high-Q microelectronic-integrable frequency-selective components is presented.Abstract:
This paper reports on the design, fabrication, and characterization of piezoelectrically-transduced micromechanical single-crystal-silicon resonators operating in their lateral bulk acoustic modes to address the need for high-Q microelectronic-integrable frequency-selective components. A simple electromechanical model for optimizing performance is presented. For verification, resonators were fabricated on 5-mum-thick silicon-on- insulator substrates and use a 0.3-mum zinc oxide film for transduction. A bulk acoustic mode was observed from a 240 mum times 40 mum resonator with a 600-Omega impedance (Q=3400 at P=1 atm) at 90 MHz. A linear resonator absorbed power of -0.5 dBm and an output current of 1.3 mA rms were measured. The same device also exhibited a Q of 12 000 in its fundamental extensional mode at a pressure of 5 torr.read more
Citations
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Proceedings ArticleDOI
A lorentz force magnetometer based on a piezoelectric-on-silicon radial-contour mode disk
Sagnik Ghosh,Joshua E.-Y. Lee +1 more
TL;DR: In this paper, a unique MEMS magnetometer based on a disk shaped radial contour mode thin-film piezoelectric on silicon (TPoS) CMOS-compatible resonator is presented.
Dissertation
Design and phase-noise modeling of temperature- compensated high frequency mems-cmos reference oscillators
Miri Lavasani,Seyed Hossein +1 more
Book ChapterDOI
Computational Modeling Challenges
TL;DR: The key challenge areas in resonator design for which advances in computational modeling provide predictive value are reviewed, including high-order bulk modes utilized in MEMS oscillators and filters.
EUROSENSORS 2015 Low Temperature Quality Factor Scaling of Laterally-vibrating AlN Piezoelectric-on-silicon Resonators
TL;DR: In this article, the quality factors of 48MHz AlN thin-film piezoelectric-on-silicon (TPoS) resonators double as a result of cryogenic cooling them from room temperature to 78K.
References
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Journal ArticleDOI
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TL;DR: In this article, the authors reviewed the literature in this field, with an emphasis on the factors that impact the magnitude of the available piezoelectric response for non-ferroelectric materials such as ZnO and AlN.
Journal ArticleDOI
MEMS technology for timing and frequency control
TL;DR: As vibrating RF MEMS devices are perceived more as circuit building blocks than as stand-alone devices, and as the frequency processing circuits they enable become larger and more complex, the makings of an integrated micromechanical circuit technology begin to take shape, perhaps with a functional breadth not unlike that of integrated transistor circuits.
Journal ArticleDOI
Nonlinear limits for single-crystal silicon microresonators
TL;DR: In this article, the authors analyzed the nonlinear effects of single-crystal silicon micro-resonators with the focus on mechanical nonlinearities and showed that the higher energy density attainable with the silicon resonators can partially compensate for the small microresonator size.
Journal ArticleDOI
Thin film resonator technology
TL;DR: In this article, the development of the thin-film resonator technology and the core elements that give rise to resonators and filters for today's high performance wireless applications are surveyed.