Journal ArticleDOI
Piezoelectric-on-Silicon Lateral Bulk Acoustic Wave Micromechanical Resonators
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TLDR
In this article, the design, fabrication, and characterization of piezoelectrically-transduced micromechanical single-crystal-silicon resonators operating in their lateral bulk acoustic modes to address the need for high-Q microelectronic-integrable frequency-selective components is presented.Abstract:
This paper reports on the design, fabrication, and characterization of piezoelectrically-transduced micromechanical single-crystal-silicon resonators operating in their lateral bulk acoustic modes to address the need for high-Q microelectronic-integrable frequency-selective components. A simple electromechanical model for optimizing performance is presented. For verification, resonators were fabricated on 5-mum-thick silicon-on- insulator substrates and use a 0.3-mum zinc oxide film for transduction. A bulk acoustic mode was observed from a 240 mum times 40 mum resonator with a 600-Omega impedance (Q=3400 at P=1 atm) at 90 MHz. A linear resonator absorbed power of -0.5 dBm and an output current of 1.3 mA rms were measured. The same device also exhibited a Q of 12 000 in its fundamental extensional mode at a pressure of 5 torr.read more
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Journal ArticleDOI
Advances in piezoelectric thin films for acoustic biosensors, acoustofluidics and lab-on-chip applications
Yong Qing Fu,Yong Qing Fu,Jack Luo,Nam-Trung Nguyen,Anthony J. Walton,Andrew J. Flewitt,Xiaotao Zu,Yifan Li,Glen McHale,Allan Matthews,Enrique Iborra,Hejun Du,William I. Milne,William I. Milne +13 more
TL;DR: In this article, the authors acknowledge support from the Innovative electronic manufacturing research centre (IeMRC) through the EPSRC funded flagship project SMART MICROSYSTEMS.
Journal ArticleDOI
Thin-film piezoelectric-on-silicon resonators for high-frequency reference oscillator applications
TL;DR: This paper studies the application of lateral bulk acoustic thin-film piezoelectric-on-substrate (TPoS) resonators in high-frequency reference oscillators, designed and fabricated in 2 classes--high-order and coupled-array and the performance characteristics of the oscillators are measured and discussed.
Journal ArticleDOI
Gallium Nitride as an Electromechanical Material
Mina Rais-Zadeh,Vikrant J. Gokhale,Azadeh Ansari,Marc Faucher,Didier Theron,Yvon Cordier,Lionel Buchaillot +6 more
TL;DR: In this paper, the authors review the electromechanical, thermal, acoustic, and piezoelectric properties of GaN and describe the working principle of some of the reported high-performance GaN-based microelectromechanical components.
Journal ArticleDOI
Micromachined Resonators: A Review
TL;DR: A review of the remarkable progress that has been made during the past few decades in design, modeling, and fabrication of micromachined resonators with references to the most influential contributions in the field for those interested in a deeper understanding of the material.
Journal ArticleDOI
High-Frequency Thermally Actuated Electromechanical Resonators With Piezoresistive Readout
TL;DR: In this article, the authors present fabrication, characterization, and modeling of micro/nanoelectromechanical high-frequency resonators actuated using thermal forces with piezoresistive readout.
References
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Proceedings ArticleDOI
Piezoelectric resonator materials
Arthur Ballato,J.G. Gualtieri +1 more
TL;DR: In this paper, a new metric for measuring material suitability for high frequency resonator use is introduced, combining all the physical quantities associated with acoustic wave propagation in piezocrystals: mass density, dielectric permittivity, piezoelectric modulus, elastic stiffness, and viscosity.
Journal ArticleDOI
Polarization effects in nitride semiconductor heterostructures
TL;DR: In this article, the ionic nature of wide bandgap nitride semiconductors coupled with the lack of inversion symmetry in the wurtzitic form, spontaneous polarization charge at heterointerfaces and piezoelectric polarization charge due to strain are induced.