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Quantitative characterization of the spin-orbit torque using harmonic Hall voltage measurements

TLDR
In this article, the authors derived an analytical formula for the harmonic Hall voltages to evaluate the effective field for both out-of-plane and in-plane magnetized systems, and the results illustrate the versatility of harmonic Hall voltage measurement for studying current induced torques in magnetic heterostructures.
Abstract
Solid understanding of current induced torques is a key to the development of current and voltage controlled magnetization dynamics in ultrathin magnetic heterostructures. To evaluate the size and direction of such torques, or effective fields, a number of methods have been employed. Here, we examine the adiabatic (low-frequency) harmonic Hall voltage measurement that has been used to study the effective field. We derive an analytical formula for the harmonic Hall voltages to evaluate the effective field for both out of plane and in-plane magnetized systems. The formula agrees with numerical calculations based on a macrospin model. Two different in-plane magnetized films, Pt|CoFeB|MgO and CuIr|CoFeB|MgO are studied using the formula developed. The effective field obtained for the latter system shows relatively good agreement with that estimated using spin torque switching phase diagram measurements reported previously. Our results illustrate the versatile applicability of harmonic Hall voltage measurement for studying current induced torques in magnetic heterostructures.

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Journal Article

▲Current-induced effective field vector in Ta│CoFeB│MgO

TL;DR: In this article, the authors describe vector measurements of the current-induced effective field in Ta|CoFeB|MgO heterostructures and show that the effective field exhibits a significant dependence on the Ta and CoFeB layer thicknesses.
Journal ArticleDOI

Field-free switching of perpendicular magnetization through spin-orbit torque in antiferromagnet/ferromagnet/oxide structures.

TL;DR: The antiferromagnetic IrMn layer supplies an in-plane exchange bias field, which enables all-electrical deterministic switching of perpendicular magnetization without any assistance from an external magnetic field, and together with sizeable spin-orbit torques, these features make antiferromeagnets a promising candidate for future spintronic devices.
Journal ArticleDOI

Electric field control of deterministic current-induced magnetization switching in a hybrid ferromagnetic/ferroelectric structure.

TL;DR: It is demonstrated that an in-plane effective magnetic field can be induced by an electric field without breaking the symmetry of the structure of the thin film, and the deterministic magnetization switching in a hybrid ferromagnetic/ferroelectric structure with Pt/Co/Ni/ Co/Pt layers on PMN-PT substrate is realized.
References
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Journal ArticleDOI

Current-driven excitation of magnetic multilayers

TL;DR: In this paper, a new mechanism was proposed for exciting the magnetic state of a ferromagnet, where a transfer of vectorial spin accompanied an electric current flowing perpendicular to two parallel magnetic films connected by a normal metallic spacer.
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Emission of spin waves by a magnetic multilayer traversed by a current.

TL;DR: In this paper, the interaction between spin waves and itinerant electrons is considerably enhanced in the vicinity of an interface between normal and ferromagnetic layers in metallic thin films, leading to a local increase of the Gilbert damping parameter which characterizes spin dynamics.
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Spin-torque switching with the giant spin hall effect of tantalum

TL;DR: In this paper, a giant spin Hall effect (SHE) in β-tantalum was shown to generate spin currents intense enough to induce spin-torque switching of ferromagnets at room temperature.
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A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction

TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
Journal ArticleDOI

Oscillatory effects and the magnetic susceptibility of carriers in inversion layers

TL;DR: In this paper, the spin-orbit interaction Hamiltonian HSO = alpha ( sigma *k) was used to change the usual patterns of B-1-periodic oscillations; some oscillations are strongly suppressed due to the diminishing of the gaps between adjacent levels and new oscillations appear due to intersections of levels.
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