Proceedings ArticleDOI
Recent progress of Germanium MOSFETs
Akira Toriumi
- pp 1-2
TLDR
In this paper, the present status of Ge MOSFET technology, particularly focusing on n-FETs in terms of materials science of GeO 2 /Ge gate stacks and inversion layer mobility, is discussed.Abstract:
This paper overviews the present status of Ge MOSFET technology, particularly focusing on n-FETs in terms of materials science of GeO 2 /Ge gate stacks and inversion layer mobility, and then discusses future prospects and fundamental challenges from the viewpoint of new types of Ge FETs.read more
Citations
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Journal ArticleDOI
Emerging Applications for High K Materials in VLSI Technology
TL;DR: The current status of High K dielectrics in Very Large Scale Integrated circuit (VLSI) manufacturing for leading edge Dynamic Random Access Memory (DRAM) and Complementary Metal Oxide Semiconductor (CMOS) applications is summarized along with the deposition methods and general equipment types employed.
Patent
Oriented bottom-up growth of armchair graphene nanoribbons on germanium
TL;DR: Graphene nanoribbons in the arrays are formed using a scalable, bottom-up, chemical vapor deposition (CVD) technique in which the (001) facet of the germanium is used to orient the graphene nanoreibbon crystals along the [110] directions of the Germanium as mentioned in this paper.
Journal ArticleDOI
Mobility Fluctuation-Induced Low-Frequency Noise in Ultrascaled Ge Nanowire nMOSFETs With Near-Ballistic Transport
TL;DR: In this article, the low-frequency noise in the Ge nanowire (NW) nMOSFETs with sub-100-nm channel length is proved to origin from the carriers' mobility fluctuation, and the dependences of lowfrequency noise on NW geometry, channel length, equivalent oxide thickness, and channel doping concentration are examined by evaluating the Hooge parameters.
Patent
Graphene-on-semiconductor substrates for analog electronics
TL;DR: In this paper, a layer of graphene on a semiconductor substrate is separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.
Journal ArticleDOI
Important roles of native-oxides on the electronic band offsets at Ge-oxide/Ge(0 0 1) heterojunction in ambient environment
TL;DR: In this paper, a clean Ge(0, 0, 1) surface was exposed to ambient environment for up to 600 days and the effect of native oxide on metal/semiconductor-oxide interface was investigated.
References
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Journal ArticleDOI
Nanowire transistors without junctions
Jean-Pierre Colinge,Chi-Woo Lee,Aryan Afzalian,Aryan Afzalian,Nima Dehdashti Akhavan,Ran Yan,Isabelle Ferain,Pedram Razavi,B. O'Neill,Alan Blake,Mary White,Anne-Marie Kelleher,Brendan McCarthy,Richard Murphy +13 more
TL;DR: A new type of transistor in which there are no junctions and no doping concentration gradients is proposed and demonstrated, which has near-ideal subthreshold slope, extremely low leakage currents, and less degradation of mobility with gate voltage and temperature than classical transistors.
Journal ArticleDOI
A Significant Shift of Schottky Barrier Heights at Strongly Pinned Metal/Germanium Interface by Inserting an Ultra-Thin Insulating Film
TL;DR: In this paper, a gradual change of Schottky barrier heights with increasing insulating film thickness has been found, which supports that the origin of Fermi level pinning at the metal/germanium junction is caused by the metal-induced gap states.
Journal ArticleDOI
Ge/GeO2 Interface Control with High-Pressure Oxidation for Improving Electrical Characteristics
TL;DR: In this article, high pressure oxidation (HPO) of germanium (Ge) for improving electrical properties of Ge/GeO2 stacks was investigated, which revealed improved electrical properties without any post-deposition annealing, and the interface states density was reduced to 2×1011 eV-1 cm-2 near the midgap.
Journal ArticleDOI
High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3
Tomonori Nishimura,Lee Choonghyun,Toshiyuki Tabata,Shengkai Wang,Kosuke Nagashio,Koji Kita,Akira Toriumi +6 more
TL;DR: In this paper, the authors presented a significant improvement of electron mobility in a germanium n-channel metal-oxide-semiconductor field effect transistor with a yttrium oxide (Y2O3) gate dielectric film annealed in high pressure O2.
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