Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures
Johanna Fischer,Olena Gomonay,Richard Schlitz,Kathrin Ganzhorn,N. Vlietstra,Matthias Althammer,Hans Huebl,Hans Huebl,Matthias Opel,Rudolf Gross,Rudolf Gross,Sebastian T. B. Goennenwein,Stephan Geprägs +12 more
TLDR
In this paper, the spin Hall magnetoresistance in thin-film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO was investigated.Abstract:
We investigate the spin Hall magnetoresistance in thin-film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the longitudinal and the transverse resistivity of the Pt layer and observe an amplitude modulation consistent with the spin Hall magnetoresistance. In comparison to Pt on collinear ferrimagnets, the modulation is phase shifted by ${90}^{\ensuremath{\circ}}$ and its amplitude strongly increases with the magnitude of the magnetic field. We explain the observed magnetic field dependence of the spin Hall magnetoresistance in a comprehensive model taking into account magnetic-field-induced modifications of the domain structure in antiferromagnets. With this generic model, we are further able to estimate the strength of the magnetoelastic coupling in antiferromagnets. Our detailed study shows that the spin Hall magnetoresistance is a versatile tool to investigate the magnetic spin structure as well as magnetoelastic effects, even in antiferromagnetic multidomain materials.read more
Citations
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Electrical switching of an antiferromagnet
TL;DR: Electrical writing is combined in solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics.
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Towards Oxide Electronics: a Roadmap
Mariona Coll,Josep Fontcuberta,Matthias Althammer,Manuel Bibes,Hans Boschker,Albert Calleja,Guanglei Cheng,Guanglei Cheng,Mario Cuoco,Regina Dittmann,Brahim Dkhil,I. El Baggari,Marco Fanciulli,Ignasi Fina,Elvira Fortunato,Carlos Frontera,Sz. Fujita,Vincent Garcia,Sebastian T. B. Goennenwein,Claes-Göran Granqvist,Julie Grollier,Rudolf Gross,Rudolf Gross,A. Hagfeldt,Gervasi Herranz,Kazuhiro Hono,Evert Pieter Houwman,Mark Huijben,Alexei Kalaboukhov,David J. Keeble,Gertjan Koster,Lena F. Kourkoutis,Jeremy Levy,M. Lira-Cantu,Judith L. MacManus-Driscoll,Jochen Mannhart,Rodrigo Martins,Stephan Menzel,Thomas Mikolajick,Mari Napari,Minh D. Nguyen,Gunnar A. Niklasson,Charles Paillard,Shrabani Panigrahi,Guus Rijnders,Florencio Sánchez,Pablo Sanchis,Simone Sanna,Darrell G. Schlom,Uwe Schroeder,Kyle Shen,Anne Siemon,M. Spreitzer,Hiroaki Sukegawa,R. Tamayo,J. van den Brink,Nini Pryds,F. Miletto Granozio +57 more
TL;DR: The Towards Oxide-Based Electronics (TO-BE) Action as mentioned in this paper has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries in a wide four-year project.
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Mechanism of Néel Order Switching in Antiferromagnetic Thin Films Revealed by Magnetotransport and Direct Imaging.
Lorenzo Baldrati,Olena Gomonay,Andrew Ross,M. Filianina,Romain Lebrun,Rafael Ramos,C. Leveille,Felix Fuhrmann,T. R. Forrest,Francesco Maccherozzi,Sergio Valencia,Florian Kronast,Eiji Saitoh,Jairo Sinova,Mathias Kläui +14 more
TL;DR: The authors' data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely, the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
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Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films
Lorenzo Baldrati,Andrew Ross,Tomohiko Niizeki,Christoph Schneider,Rafael Ramos,Joel Cramer,Olena Gomonay,M. Filianina,Tatiana Savchenko,Daniel Heinze,Armin Kleibert,Eiji Saitoh,Jairo Sinova,Mathias Kläui +13 more
TL;DR: In this paper, the authors studied bilayers of thin films of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt and found that a careful subtraction of the ordinary magnetoresistance contribution in Pt is crucial to determine the SMR amplitude and thus the N\'eel vector average orientation.
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Electrical Switching of Tristate Antiferromagnetic Néel Order in α -Fe 2 O 3 Epitaxial Films
TL;DR: In this article, the authors demonstrate non-decaying, steplike electrical switching of tristate N-eel order bilayers detected by the spin-Hall induced anomalous Hall effect.
References
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Journal ArticleDOI
Spin Hall Effect
TL;DR: In this paper, it is proposed that when a charge current circulates in a paramagnetic metal, a transverse spin imbalance will be generated, giving rise to a spin Hall voltage, in the absence of charge current and magnetic field.
Spin Hall Effect
TL;DR: In this article, it is proposed that when a charge current circulates in a paramagnetic metal, a transverse spin imbalance will be generated, giving rise to a spin Hall voltage, in the absence of charge current and magnetic field.
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Antiferromagnetic spintronics
TL;DR: This Review focuses on recent works that have addressed how to manipulate and detect the magnetic state of an antiferromagnet efficiently and briefly mentions the broader context of spin transport, magnetic textures and dynamics, and materials research.
Journal ArticleDOI
Electrical switching of an antiferromagnet.
Peter Wadley,B. Howells,J. Železný,J. Železný,C. Andrews,V. Hills,R. P. Campion,Vít Novák,K. Olejník,Francesco Maccherozzi,Sarnjeet S. Dhesi,S. Y. Martin,Thomas Wagner,Thomas Wagner,Joerg Wunderlich,Joerg Wunderlich,Frank Freimuth,Yuriy Mokrousov,Jan Kuneš,J.S. Chauhan,M.J. Grzybowski,M.J. Grzybowski,A. W. Rushforth,K. W. Edmonds,B. L. Gallagher,Tomas Jungwirth +25 more
TL;DR: In this paper, the authors demonstrate room-temperature electrical switching between stable configurations in antiferromagnetic CuMnAs thin-film devices by applied current with magnitudes of order 106 ampere per square centimeter.
Journal ArticleDOI
Spin Hall Magnetoresistance Induced by a Nonequilibrium Proximity Effect
Hiroyasu Nakayama,Matthias Althammer,Yan Ting Chen,Ken-ichi Uchida,Ken-ichi Uchida,Y. Kajiwara,Daisuke Kikuchi,Toshiro Ohtani,Stephan Geprägs,Matthias Opel,Saburo Takahashi,Rudolf Gross,Gerrit E. W. Bauer,Gerrit E. W. Bauer,Sebastian T. B. Goennenwein,Eiji Saitoh +15 more
TL;DR: It is shown that the effect originates from concerted actions of the direct and inverse spin Hall effects and therefore it is called "spin Hall magnetoresistance."
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