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Spin Hall magnetoresistance in antiferromagnet/heavy-metal heterostructures

TLDR
In this paper, the spin Hall magnetoresistance in thin-film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO was investigated.
Abstract
We investigate the spin Hall magnetoresistance in thin-film bilayer heterostructures of the heavy metal Pt and the antiferromagnetic insulator NiO. While rotating an external magnetic field in the easy plane of NiO, we record the longitudinal and the transverse resistivity of the Pt layer and observe an amplitude modulation consistent with the spin Hall magnetoresistance. In comparison to Pt on collinear ferrimagnets, the modulation is phase shifted by ${90}^{\ensuremath{\circ}}$ and its amplitude strongly increases with the magnitude of the magnetic field. We explain the observed magnetic field dependence of the spin Hall magnetoresistance in a comprehensive model taking into account magnetic-field-induced modifications of the domain structure in antiferromagnets. With this generic model, we are further able to estimate the strength of the magnetoelastic coupling in antiferromagnets. Our detailed study shows that the spin Hall magnetoresistance is a versatile tool to investigate the magnetic spin structure as well as magnetoelastic effects, even in antiferromagnetic multidomain materials.

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Electrical switching of an antiferromagnet

TL;DR: Electrical writing is combined in solid-state memory with electrical readout and the stored magnetic state is insensitive to and produces no external magnetic field perturbations, which illustrates the unique merits of antiferromagnets for spintronics.
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Towards Oxide Electronics: a Roadmap

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TL;DR: The Towards Oxide-Based Electronics (TO-BE) Action as mentioned in this paper has been recently running in Europe and has involved as participants several hundred scientists from 29 EU countries in a wide four-year project.
Journal ArticleDOI

Mechanism of Néel Order Switching in Antiferromagnetic Thin Films Revealed by Magnetotransport and Direct Imaging.

TL;DR: The authors' data reveal two different magnetic switching mechanisms leading together to an efficient switching, namely, the spin-current induced effective magnetic anisotropy variation and the action of the spin torque on the DWs.
Journal ArticleDOI

Full angular dependence of the spin Hall and ordinary magnetoresistance in epitaxial antiferromagnetic NiO(001)/Pt thin films

TL;DR: In this paper, the authors studied bilayers of thin films of the epitaxial antiferromagnetic insulator NiO(001) and the heavy metal Pt and found that a careful subtraction of the ordinary magnetoresistance contribution in Pt is crucial to determine the SMR amplitude and thus the N\'eel vector average orientation.
Journal ArticleDOI

Electrical Switching of Tristate Antiferromagnetic Néel Order in α -Fe 2 O 3 Epitaxial Films

TL;DR: In this article, the authors demonstrate non-decaying, steplike electrical switching of tristate N-eel order bilayers detected by the spin-Hall induced anomalous Hall effect.
References
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Journal ArticleDOI

Spin Hall Effect

TL;DR: In this paper, it is proposed that when a charge current circulates in a paramagnetic metal, a transverse spin imbalance will be generated, giving rise to a spin Hall voltage, in the absence of charge current and magnetic field.

Spin Hall Effect

TL;DR: In this article, it is proposed that when a charge current circulates in a paramagnetic metal, a transverse spin imbalance will be generated, giving rise to a spin Hall voltage, in the absence of charge current and magnetic field.
Journal ArticleDOI

Antiferromagnetic spintronics

TL;DR: This Review focuses on recent works that have addressed how to manipulate and detect the magnetic state of an antiferromagnet efficiently and briefly mentions the broader context of spin transport, magnetic textures and dynamics, and materials research.
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