State of the art of high temperature power electronics
Cyril Buttay,Dominique Planson,Bruno Allard,Dominique Bergogne,Pascal Bevilacqua,Charles Joubert,Mihai Lazar,Christian Martin,Hervé Morel,Dominique Tournier,Christophe Raynaud +10 more
TLDR
In this article, a power converter operating at temperatures above 200 °C has been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).Abstract:
High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500 °C, whereas silicon is limited to 150-200 °C. Applications such as transportation or a deep oil and gas wells drilling can benefit. A few converters operating above 200 °C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).read more
Citations
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Mechanical properties of nano-silver joints as die attach materials
TL;DR: In this paper, the development of silver (Ag) as a die attach bonding material in the microelectronic packaging industry from its early days as micron-scale silver flakes to the recent nanoscale Ag paste and other derivatives is discussed.
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Survey of High-Temperature Reliability of Power Electronics Packaging Components
TL;DR: In this paper, the authors focus on the reliability of a selection of potential components or materials used in the package assembly as the substrates, the die attaches, the interconnections, and the encapsulation materials.
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Are Sintered Silver Joints Ready for Use as Interconnect Material in Microelectronic Packaging
TL;DR: In this paper, the authors discuss the main methods of applying Ag pastes/laminates as die-attach materials and the related processing conditions, and the long-term reliability of sintered Ag joints.
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Wide-bandgap semiconductor materials: For their full bloom†
TL;DR: In this paper, issues of wide-bandgap semiconductors to be addressed in their basic properties are examined toward their?full bloom? and other widebandgap materials such as diamond and oxides are attracting focusing interest due to their promising functions especially for power devices.
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High temperature electrical energy storage: advances, challenges, and frontiers
TL;DR: This review presents a comprehensive analysis of different applications associated with high temperature use, recent advances in the development of reformulated or novel materials with high thermal stability, and their demonstrative use in EES devices to present a critical overview of the limitations of current high temperature systems.
References
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Selected failure mechanisms of modern power modules
TL;DR: This compendium provides the main failure modes, the physical or chemical processes that lead to the failure, and reports some major technological countermeasures, which are used for realizing the very stringent reliability requirements imposed in particular by the electrical traction applications.
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Power Conversion With SiC Devices at Extremely High Ambient Temperatures
Tsuyoshi Funaki,Juan Carlos Balda,J. Junghans,Avinash Srikrishnan Kashyap,Homer Alan Mantooth,Fred Barlow,Tsunenobu Kimoto,Takashi Hikihara +7 more
TL;DR: In this article, the capability of SiC power semiconductor devices, in particular JFET and Schottky barrier diodes (SBDs), for application in high-temperature power electronics was evaluated.
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Reliability and performance limitations in SiC power devices
TL;DR: The performance and reliability issues unique to SiC discussed here include: (a) MOS channel conductance/gate dielectric reliability trade-off due to lower channel mobility as well as SiC–SiO2 barrier lowering due to interface traps; (b) reduction in breakdown field and increased leakageCurrent due to material defects; and (c) increased leakage current in SiC Schottky devices at high temperatures.
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Novel large area joining technique for improved power device performance
H. Schwarzbauer,R. Kuhnert +1 more
TL;DR: In this paper, a diffusion welding-based low-temperature joining technique based on the principle of diffusion welding has been developed for joining a silicon wafer to suitable substrates.
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High-Temperature Operation of SiC Power Devices by Low-Temperature Sintered Silver Die-Attachment
TL;DR: In this article, a low-temperature sintering of nanoscale silver paste was used to achieve high temperature operation of SiC power semiconductor devices by using stencil-printed layers of the nano-scale silver paste on Au or Ag metallized direct bonded copper (DBC) substrates for die-attachment.