Proceedings ArticleDOI
Thermal Conductivity of β-Ga 2 O 3 Thin Films Grown by Molecular Beam Epitaxy
Diego Vaca,Luke Yates,Neeraj Nepal,D. Scott Katzer,Brian P. Downey,Virginia D. Wheeler,David J. Meyer,Samuel Graham,Satish Kumar +8 more
- pp 1011-1016
TLDR
In this paper, the authors used time-domain thermoreflectance to measure the thermal conductivity and thermal boundary conductance (TBC) of thin films of β-Ga 2 O 3 grown using molecular beam epitaxy (MBE) on c-Al 2O 3 (sapphire) and 4H-SiC substrates.Abstract:
β-Ga 2 O 3 is considered as a promising material for future power electronic applications. In this work, we used time-domain thermoreflectance to measure the thermal conductivity and thermal boundary conductance (TBC) of thin films of β-Ga 2 O 3 grown using molecular beam epitaxy (MBE) on c-Al 2 O 3 (sapphire) and 4H-SiC substrates. One sample was 119 nm thick on sapphire, while the other sample was 81 nm thick on 4H-SiC. The Ga 2 O 3 layer on c-sapphire presented a through-plane thermal conductivity of 3.2 ± 0.3 W/m-K with a Ga 2 O 3 /sapphire TBC of 155.6 ± 65.3 MW/m2-K. The thermal conductivity of the Ga 2 O 3 layer on 4H-SiC was measured as 3.1 ± 0.5 W/m-K with a Ga 2 O 3 /SiC TBC of 141.8 ± 63.8 MW/m2-K. When compared with the thermal conductivity of films grown using pulsed-laser deposition from a previous study, thermal conductivity of layers grown by MBE show higher values, which suggests that the films grown by epitaxial method such as MBE can improve the thermal conductivity of thin films.read more
Citations
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Journal ArticleDOI
Measurements and numerical calculations of thermal conductivity to evaluate the quality of β-gallium oxide thin films grown on sapphire and silicon carbide by molecular beam epitaxy
Diego Vaca,Matthew M. Barry,Luke Yates,Neeraj Nepal,D. S. Katzer,Brian P. Downey,Virginia D. Wheeler,Luke O. Nyakiti,David J. Meyer,Samuel Graham,Satish Kumar +10 more
TL;DR: In this article , a method to obtain insight into lower thermal conductivity of β-Ga2O3 thin films grown by molecular beam epitaxy (MBE) on c-plane sapphire and 4H-SiC substrates was reported.
Journal ArticleDOI
Bandgap Modulation and Electrical Characteristics of (AlxGa1−x)2O3/4H-SiC Thin Film Heterostructures
Hee-Jae Lee,Myeong Cheol Shin,Soo-Young Moon,Dongjin Byun,Min-Yeong Kim,Hyung-Jin Lee,Geonduk Lee,Seungwoo Jung,Michael A. Schweitz,Joon Y. Park,You Seung Rim,Sang-Mo Koo +11 more
TL;DR: In this paper , the authors demonstrate the tuning of the bandgap of (Al x Ga 1− x ) 2 O 3 by varying the Al composition and show that the resulting device has improved or maintained electrical properties.
References
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