Journal ArticleDOI
Zeeman-type spin splitting controlled by an electric field
Hongtao Yuan,Hongtao Yuan,Mohammad Saeed Bahramy,Mohammad Saeed Bahramy,K. Morimoto,Sanfeng Wu,Kentaro Nomura,Kentaro Nomura,Bohm-Jung Yang,Hidekazu Shimotani,Hidekazu Shimotani,Ryuji Suzuki,Minglin Toh,Christian Kloc,Xiaodong Xu,Ryotaro Arita,Ryotaro Arita,Naoto Nagaosa,Naoto Nagaosa,Yoshihiro Iwasa,Yoshihiro Iwasa +20 more
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TLDR
In this paper, it was shown that spin polarization can also be achieved without the need for magnetism by using the unique crystal symmetry of tungsten selenide, which creates a Zeeman-like effect when a monolayer of the material is exposed to an external electric field.Abstract:
A magnetic field can lift the spin degeneracy of electrons. This Zeeman effect is an important route to generating the spin polarization required for spintronics. It is now shown that such polarization can also be achieved without the need for magnetism. The unique crystal symmetry of tungsten selenide creates a Zeeman-like effect when a monolayer of the material is exposed to an external electric field.read more
Citations
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Spin and pseudospins in layered transition metal dichalcogenides
TL;DR: In this article, the authors provide a brief review of both theoretical and experimental advances in this field and uncover the interplay between real spin and pseudospins in layered transition metal dichalcogenides.
Journal ArticleDOI
Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions.
Jason Ross,Philip Klement,Aaron M. Jones,Nirmal Ghimire,Jiaqiang Yan,David Mandrus,Takashi Taniguchi,Kenji Watanabe,Kenji Kitamura,Wang Yao,David Cobden,Xiaodong Xu +11 more
TL;DR: Electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath is reported, which has the required ingredients for new types of optoelectronic device, such as spin- and valley-polarized light-emitting diodes, on-chip lasers and two-dimensional electro-optic modulators.
Journal ArticleDOI
Janus monolayers of transition metal dichalcogenides
Ang-Yu Lu,Hanyu Zhu,Jun Xiao,Chih Piao Chuu,Yimo Han,Ming-Hui Chiu,Chia Chin Cheng,Chia Chin Cheng,Chih-Wen Yang,Kung-Hwa Wei,Yiming Yang,Yiming Yang,Yuan Wang,Yuan Wang,Dimosthenis Sokaras,Dennis Nordlund,Peidong Yang,Peidong Yang,David A. Muller,Mei-Yin Chou,Mei-Yin Chou,Mei-Yin Chou,Xiang Zhang,Xiang Zhang,Lain-Jong Li +24 more
TL;DR: A synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry of MoSSe by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy is reported.
Journal ArticleDOI
Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction
Hongtao Yuan,Xiaoge Liu,Farzaneh Afshinmanesh,Wei Li,Gang Xu,Jie Sun,Biao Lian,Alberto G. Curto,G. J. Ye,Yasuyuki Hikita,Yasuyuki Hikita,Zhi-Xun Shen,Zhi-Xun Shen,Shou-Cheng Zhang,Shou-Cheng Zhang,Xianhui Chen,Mark L. Brongersma,Mark L. Brongersma,Harold Y. Hwang,Harold Y. Hwang,Yi Cui,Yi Cui +21 more
TL;DR: A broadband photodetector using a layered black phosphorus transistor that is polarization-sensitive over a bandwidth from ∼400 nm to 3,750‽nm is demonstrated and might provide new functionalities in novel optical and optoelectronic device applications.
Journal ArticleDOI
Janus Monolayer Transition-Metal Dichalcogenides
Jing Zhang,Shuai Jia,Iskandar Kholmanov,Liang Dong,Dequan Er,Weibing Chen,Hua Guo,Zehua Jin,Vivek B. Shenoy,Li Shi,Jun Lou +10 more
TL;DR: High basal plane hydrogen evolution reaction activity is discovered for the Janus monolayer, and DFT calculation implies that the activity originates from the synergistic effect of the intrinsic defects and structural strain inherent in theJanus structure.
References
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Journal ArticleDOI
Spin-galvanic effect
Sergey Ganichev,E. L. Ivchenko,Vassilij Belkov,Sergey Tarasenko,M. Sollinger,Dieter Weiss,Werner Wegscheider,Werner Wegscheider,Wilhelm Prettl +8 more
TL;DR: In contrast to previous experiments, where spin-polarized currents were driven by electric fields in semiconductor, the complementary situation where electron spins drive a current without the need of an external electric field is demonstrated.
Journal ArticleDOI
Novel High-Mobility Field-Effect Transistors Based on Transition Metal Dichalcogenides
TL;DR: In this article, the authors report the fabrication of novel field effect transistors (FETs) based on transition metal dichalcogenides, which demonstrate ambipolar operation.
Journal ArticleDOI
Discovery of superconductivity in KTaO 3 by electrostatic carrier doping
Kazunori Ueno,Shintaro Nakamura,Hidekazu Shimotani,Hongtao Yuan,Noriaki Kimura,Tsutomu Nojima,Haruyoshi Aoki,Yoshihiro Iwasa,Masashi Kawasaki,Masashi Kawasaki +9 more
TL;DR: The present result clearly shows that electrostatic carrier doping can lead to new states of matter at nanoscale interfaces and can induce superconductivity in KTaO(3), a material in whichsuperconductivity has not been observed before.
Journal ArticleDOI
Rashba spin-orbit coupling probed by the weak antilocalization analysis in InAlAs/InGaAs/InAlAs quantum wells as a function of quantum well asymmetry.
TL;DR: In this paper, the authors investigated the values of the Rashba spin-orbit coupling constant alpha in In(0.52)Al (0.48)As/In( 0.53)Ga(0.,0.47)In(0,0.51)Al(0,.48)InIn(In,0,1.52),Al( 0,0.,1.48),In, 0,1.,0,2.
Journal ArticleDOI
Spatial imaging of the spin Hall effect and current-induced polarization in two-dimensional electron gases
TL;DR: Spatial imaging of spin Hall effect and current-induced polarization in two-dimensional electron gases is described in this paper, where the spin Hall effects and current induced polarization are investigated.