Journal ArticleDOI
Zeeman-type spin splitting controlled by an electric field
Hongtao Yuan,Hongtao Yuan,Mohammad Saeed Bahramy,Mohammad Saeed Bahramy,K. Morimoto,Sanfeng Wu,Kentaro Nomura,Kentaro Nomura,Bohm-Jung Yang,Hidekazu Shimotani,Hidekazu Shimotani,Ryuji Suzuki,Minglin Toh,Christian Kloc,Xiaodong Xu,Ryotaro Arita,Ryotaro Arita,Naoto Nagaosa,Naoto Nagaosa,Yoshihiro Iwasa,Yoshihiro Iwasa +20 more
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TLDR
In this paper, it was shown that spin polarization can also be achieved without the need for magnetism by using the unique crystal symmetry of tungsten selenide, which creates a Zeeman-like effect when a monolayer of the material is exposed to an external electric field.Abstract:
A magnetic field can lift the spin degeneracy of electrons. This Zeeman effect is an important route to generating the spin polarization required for spintronics. It is now shown that such polarization can also be achieved without the need for magnetism. The unique crystal symmetry of tungsten selenide creates a Zeeman-like effect when a monolayer of the material is exposed to an external electric field.read more
Citations
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Spin and pseudospins in layered transition metal dichalcogenides
TL;DR: In this article, the authors provide a brief review of both theoretical and experimental advances in this field and uncover the interplay between real spin and pseudospins in layered transition metal dichalcogenides.
Journal ArticleDOI
Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p-n junctions.
Jason Ross,Philip Klement,Aaron M. Jones,Nirmal Ghimire,Jiaqiang Yan,David Mandrus,Takashi Taniguchi,Kenji Watanabe,Kenji Kitamura,Wang Yao,David Cobden,Xiaodong Xu +11 more
TL;DR: Electroluminescence from lateral p-n junctions in monolayer WSe2 induced electrostatically using a thin boron nitride support as a dielectric layer with multiple metal gates beneath is reported, which has the required ingredients for new types of optoelectronic device, such as spin- and valley-polarized light-emitting diodes, on-chip lasers and two-dimensional electro-optic modulators.
Journal ArticleDOI
Janus monolayers of transition metal dichalcogenides
Ang-Yu Lu,Hanyu Zhu,Jun Xiao,Chih Piao Chuu,Yimo Han,Ming-Hui Chiu,Chia Chin Cheng,Chia Chin Cheng,Chih-Wen Yang,Kung-Hwa Wei,Yiming Yang,Yiming Yang,Yuan Wang,Yuan Wang,Dimosthenis Sokaras,Dennis Nordlund,Peidong Yang,Peidong Yang,David A. Muller,Mei-Yin Chou,Mei-Yin Chou,Mei-Yin Chou,Xiang Zhang,Xiang Zhang,Lain-Jong Li +24 more
TL;DR: A synthetic strategy to grow Janus monolayers of transition metal dichalcogenides breaking the out-of-plane structural symmetry of MoSSe by means of scanning transmission electron microscopy and energy-dependent X-ray photoelectron spectroscopy is reported.
Journal ArticleDOI
Polarization-sensitive broadband photodetector using a black phosphorus vertical p–n junction
Hongtao Yuan,Xiaoge Liu,Farzaneh Afshinmanesh,Wei Li,Gang Xu,Jie Sun,Biao Lian,Alberto G. Curto,G. J. Ye,Yasuyuki Hikita,Yasuyuki Hikita,Zhi-Xun Shen,Zhi-Xun Shen,Shou-Cheng Zhang,Shou-Cheng Zhang,Xianhui Chen,Mark L. Brongersma,Mark L. Brongersma,Harold Y. Hwang,Harold Y. Hwang,Yi Cui,Yi Cui +21 more
TL;DR: A broadband photodetector using a layered black phosphorus transistor that is polarization-sensitive over a bandwidth from ∼400 nm to 3,750‽nm is demonstrated and might provide new functionalities in novel optical and optoelectronic device applications.
Journal ArticleDOI
Janus Monolayer Transition-Metal Dichalcogenides
Jing Zhang,Shuai Jia,Iskandar Kholmanov,Liang Dong,Dequan Er,Weibing Chen,Hua Guo,Zehua Jin,Vivek B. Shenoy,Li Shi,Jun Lou +10 more
TL;DR: High basal plane hydrogen evolution reaction activity is discovered for the Janus monolayer, and DFT calculation implies that the activity originates from the synergistic effect of the intrinsic defects and structural strain inherent in theJanus structure.
References
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Journal ArticleDOI
Spin splitting in semiconductor heterostructures for B-->0.
TL;DR: This work shows for AlGaAs/GaAs heterostructures how this finite spin splitting at B=0 evolves from the Zeeman splitting for B\ensuremath{
e}0 and predicts a vanishingspin splitting at a finite -magnetic- field \char22{}, which depends on the electron concentration in the inversion layer.
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Magnetoresistance in Two-Dimensional Disordered Systems: Effects of Zeeman Splitting and Spin-Orbit Scattering
TL;DR: In this article, the effects of Zeeman splitting and spin-orbit scattering on the resistance in two-dimensional disordered systems are theoretically studied. And the field dependence of the magnetoresistance is shown to have the characteristic anisotropy.
Journal ArticleDOI
Electrostatic and Electrochemical Nature of Liquid-Gated Electric-Double-Layer Transistors Based on Oxide Semiconductors
Hongtao Yuan,Hidekazu Shimotani,Jianting Ye,Sungjae Yoon,Hasniah Aliah,Atsushi Tsukazaki,Masashi Kawasaki,Yoshihiro Iwasa +7 more
TL;DR: The temperature-frequency mapping of EIS was demonstrated as a "phase diagram" to distinguish the electrostatic or electrochemical nature of such highly charged EDL interfaces with densities of up to 8 × 10(14) cm(-2), providing a guideline for electric-field-induced electronic phenomena and a simple method for distinguishing electrostatic and electrochemical charging in EDLTs.
Journal ArticleDOI
Emergence of non-centrosymmetric topological insulating phase in BiTeI under pressure
TL;DR: It is shown through sophisticated first-principles calculations that BiTeI, a giant bulk Rashba semiconductor, turns into a topological insulator under a reasonable pressure, and is shown to exhibit several unique features, such as a highly pressure-tunable giant Rashba spin splitting, an unusual pressure-induced quantum phase transition, and the formation of strikingly different Dirac surface states at opposite sides of the material.