Showing papers on "Dielectric published in 2006"

Linear optical properties in the projector-augmented wave methodology

Abstract: In this work we derive closed expressions for the head of the frequency-dependent microscopic polarizability matrix in the projector-augmented wave (PAW) methodology. Contrary to previous applications, the longitudinal expression is utilized, resulting in dielectric properties that are largely independent of the applied potentials. The improved accuracy of the present approach is demonstrated by comparing the longitudinal and transversal expressions of the polarizability matrix for a number of cubic semiconductors and one insulator, i.e., Si, SiC, AlP, GaAs, and diamond (C), respectively. The methodology is readily extendable to more complicated nonlocal Hamiltonians or to the calculation of the macroscopic dielectric matrix including local field effects in the random phase or density functional approximation, which is demonstrated for the previously mentioned model systems. Furthermore, density functional perturbation theory is extended to the PAW method, and the respective results are compared to those obtained by summation over the conduction band states.

A Dielectric Polymer with High Electric Energy Density and Fast Discharge Speed

Abstract: Dielectric polymers with high dipole density have the potential to achieve very high energy density, which is required in many modern electronics and electric systems. We demonstrate that a very high energy density with fast discharge speed and low loss can be obtained in defect-modified poly(vinylidene fluoride) polymers. This is achieved by combining nonpolar and polar molecular structural changes of the polymer with the proper dielectric constants, to avoid the electric displacement saturation at electric fields well below the breakdown field. The results indicate that a very high dielectric constant may not be desirable to reach a very high energy density.

High dielectric constant gate oxides for metal oxide Si transistors

Abstract: The scaling of complementary metal oxide semiconductor transistors has led to the silicon dioxide layer, used as a gate dielectric, being so thin (14?nm) that its leakage current is too large It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (?) or 'high K' gate oxides such as hafnium oxide and hafnium silicate These oxides had not been extensively studied like SiO2, and they were found to have inferior properties compared with SiO2, such as a tendency to crystallize and a high density of electronic defects Intensive research was needed to develop these oxides as high quality electronic materials This review covers both scientific and technological issues?the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure and reactions, their electronic structure, bonding, band offsets, electronic defects, charge trapping and conduction mechanisms, mobility degradation and flat band voltage shifts The oxygen vacancy is the dominant electron trap It is turning out that the oxides must be implemented in conjunction with metal gate electrodes, the development of which is further behind Issues about work function control in metal gate electrodes are discussed

Fundamentals of Liquid Crystal Devices

Abstract: Foreword. Series Editor's Foreword. Preface. 1. Liquid crystal physics.* Introduction.* Thermodynamics and statistic physics.* Orientational order.* Elastic properties of liquid crystals.* Response of liquid crystals to electro-magnetic fields.* Anchoring effects of nematic liquid crystal at surfaces. 2. Propagation of light in anisotropic optical medium.* Electromagnetic wave.* Polarization.* Propagation of light in uniform anisotropic optical media.* Propagation of light in cholesteric liquid crystals. 3. Optical modeling methods.* Jones matrix method.* Mueller matrix method.* Berreman 4x4 method. 4. Effects of Electric field on Liquid Crystals.* Dielectric interaction.* Flexoelectric Effect.* Ferroelectricity in liquid crystals. 5. Freedericksz transition.* Calculus of variation.* The Fredeericksz transition: statics.* The Freedericksz transition: dynamics. 6. Liquid Crystal Materials.* Introduction.* Refractive indices.* Dielectric constants.* Rotational Viscosity.* Elastic constant.* Figure-of-merits.* Refractive index matching between liquid crystals and polymers. 7. Modeling of liquid crystal director configuration.* Electric energy of liquid crystals.* Modeling electric field.* Simulation of liquid crystal director configuration. 8. Transmissive liquid crystal display.* Introduction.* Twisted nematic cells.* In plane switching (IPS) mode.* Vertical alignment (VA) mode.* Multi-domain Vertical Alignment (MVA) Cells.* Optically compensated bend (OCB) cell. 9. Reflective and Trasreflective display.* Introduction.* Reflective liquid crystal displays.* Transflector.* Classification of Transflective LCDs.* Dual-cell-gap Transflective LCDs.* Single-cell-gap Transflective LCDs.* Performance of transflective LCDs. 10. Liquid crystal display matrices, drive schemes and bistable displays.* Segmented displays.* Passive matrix displays and drive scheme.* Active Matrix Displays.* Bistable ferroelectric liquid crystal displays and drive scheme.* Bistable nematic displays.* Bistable cholesteric reflective display. 11. Liquid crystal/polymer composites. * Introduction.* Phase separation.* Scattering properties of liquid crystal/polymer composites.* Polymer dispersed liquid crystals.* Polymer stabilization liquid crystals.* Displays from liquid crystal/polymer composites. 12. Tunable liquid crystal photonic devices. * Introduction.* Laser beam steering.* Variable Optical Attenuators.* Tunable-Focus Lens.* Polarization-Independent LC Devices. Index.

End effector coatings for electrosurgical instruments

Abstract: An electrosurgical stapling instrument includes an end effector capable of applying bipolar RF energy into tissue. The end effector has a first pole electrode and a second pole electrode for forming an RF contact circuit with tissue. At least one of the electrodes may have a dielectric coating thereon to create a RF circuit with tissue. The dielectric coating can cover one of the electrodes to create a capacitive coupling circuit with tissue, or can have at least one open passageway extending through the dielectric coating to enable tissue contact with the electrode and the passage of RF energy therethrough. The dielectric coating on the electrode can be masked to create passageways through the dielectric, or the dielectric coating can be locally removed with a variety of techniques to form passageways. The dielectric coating may provide a barrier to prevent shorting between the dielectrically coated electrode and a conductive fastener embedded within tissue. Alternately, a cartridge coating can be used to reduce an electric surface sheet charge on the cartridge thermoplastic that can occur during the application of RF energy to tissue.

Piezoelectric properties in perovskite 0.948(K0.5Na0.5)NbO3–0.052LiSbO3 lead-free ceramics

Abstract: Lead-free piezoelectric ceramics, with the nominal composition of 0.948(K0.5Na0.5)NbO3–0.052LiSbO3 (KNN-LS5.2), were synthesized by conventional solid-state sintering, and the piezoelectric and electromechanical properties were characterized as a function of temperature. The Curie temperature of the KNN based perovskite material was found to be 368°C with an orthorhombic-tetragonal polymorphic phase transition (TO-T) temperature at approximately ∼35°C. The room temperature dielectric permittivity (e33T∕e0) and loss were found to be 1380 and 2%, respectively, with piezoelectric properties of k33∼62% and d33∼265pC∕N and k31∼30% and d31∼−116pC∕N. The temperature dependence of the properties mimicked the compositional variation seen in the proximity of a morphotropic phase boundary [e.g., lead zirconate titanate (PZT)], with a maxima in the dielectric and piezoelectric properties and a corresponding “softening” of the elastic properties. Unlike that found for PZT-type materials, the modified KNN material exhi...

Directed subwavelength imaging using a layered metal-dielectric system

Abstract: We examine some of the optical properties of a metamaterial consisting of thin layers of alternating metal and dielectric. We can model this material as a homogeneous effective medium with anisotropic dielectric permittivity. When the components of this permittivity have different signs, the behavior of the system becomes very interesting: the normally evanescent parts of a $P$-polarized incident field are now transmitted, and there is a preferred direction of propagation. We show that a slab of this material can form an image with subwavelength details, at a position which depends on the frequency of light used. The quality of the image is affected by absorption and by the finite width of the layers; we go beyond the effective-medium approximation to predict how thin the layers need to be in order to obtain subwavelength resolution.

Surface enhanced Raman spectroscopy: new materials, concepts, characterization tools, and applications.

Abstract: Surface-enhanced Raman spectroscopy (SERS) is currently experiencing a renaissance in its development driven by the remarkable discovery of single molecule SERS (SMSERS) and the explosion of interest in nanophotonics and plasmonics. Because excitation of the localized surface plasmon resonance (LSPR) of a nanostructured surface or nanoparticle lies at the heart of SERS, it is important to control all of the factors influencing the LSPR in order to maximize signal strength and ensure reproducibility. These factors include material, size, shape, interparticle spacing, and dielectric environment. All of these factors must be carefully controlled to ensure that the incident laser light maximally excites the LSPR in a reproducible manner. This article describes the use of nanosphere lithography for the fabrication of highly reproducible and robust SERS substrates for both fundamental studies and applications. Atomic layer deposition (ALD) is introduced as a novel fabrication method for dielectric spacers to study the SERS distance dependence and control the nanoscale dielectric environment. Wavelength scanned SER excitation spectroscopy (WS SERES) measurements show that enhancement factors approximately 10(8) are obtainable from NSL-fabricated surfaces and provide new insight into the electromagneticfield enhancement mechanism. Tip-enhanced Raman spectroscopy (TERS) is an extremely promising new development to improve the generality and information content of SERS. A 2D correlation analysis is applied to SMSERS data. Finally, the first in vivo SERS glucose sensing study is presented.

Tunable Fröhlich polarons in organic single-crystal transistors

Abstract: In organic field-effect transistors (FETs), charges move near the surface of an organic semiconductor, at the interface with a dielectric. In the past, the nature of the microscopic motion of charge carriers—which determines the device performance—has been related to the quality of the organic semiconductor. Recently, it was discovered that the nearby dielectric also has an unexpectedly strong influence. The mechanisms responsible for this influence are not understood. To investigate these mechanisms, we have studied transport through organic single-crystal FETs with different gate insulators. We find that the temperature dependence of the mobility evolves from metallic-like to insulating-like with increasing dielectric constant of the insulator. The phenomenon is accounted for by a two-dimensional Frohlich polaron model that quantitatively describes our observations and shows that increasing the dielectric polarizability results in a crossover from the weak to the strong polaronic coupling regime. This represents a considerable step forward in our understanding of transport through organic transistors, and identifies a microscopic physical process with a large influence on device performance.

Optically produced arrays of planar nanostructures inside fused silica.

Abstract: Linearly polarized femtosecond light pulses, focused inside fused silica to an intensity that leads to multiphoton ionization, produce arrayed planes of modified material having their normal parallel to the laser polarization. The planes are $\ensuremath{\le}10\text{ }\text{ }\mathrm{nm}$ thick and are spaced at $\ensuremath{\sim}\ensuremath{\lambda}/2$ in the medium for free space wavelengths of both 800 and 400 nm. By slowly scanning the sample under a fixed laser focus, order is maintained over macroscopic distances for all angles between the polarization and scan direction. With the laser polarization parallel to the scan direction we produce long-range Bragg-like gratings. We discuss how local field enhancement influences dielectric ionization, describe how this leads to nanoplane growth, why the planes are arrayed, and how long-range order is maintained.

General properties of local plasmons in metal nanostructures.

Abstract: Under the quasistatic approximation, the characteristics of a local plasmon resonance of a metal nanostructure exhibit several general properties. The resonance frequency depends on the fraction of plasmon energy residing in the metal through the real dielectric function of the metal. For a given resonant frequency, the Q factor of the resonance is determined only by the complex dielectric function of the metal material, independent of the nanostructure form or the dielectric environment. A simple result describing the effect of optical gain on the Q factor is also obtained.

Origin of the dielectric dead layer in nanoscale capacitors

Abstract: New theoretical work nails down the microscopic origin of 'dead layers' in nanometre-scale capacitors and demonstrates that it is an intrinsic effect. The results provide practical guidelines for minimizing the deleterious effects of the dielectric dead layer, for example regarding the choice of electrode. Capacitors are a mainstay of electronic integrated circuits and devices, where they perform essential functions such as storing electrical charge, and blocking direct current while allowing alternating currents to propagate. Because they are often the largest components in circuits, extensive efforts are directed at reducing their size through the use of high-permittivity insulators such as perovskite-structure SrTiO3 (refs 1, 2), which should provide more capacitance per unit area of device. Unfortunately, most experiments on thin-film SrTiO3 capacitors have yielded capacitance values that are orders of magnitude smaller than expected3. The microscopic origin of this reduced capacitance, which is often discussed in terms of a low-permittivity interfacial ‘dead layer’4, is not well understood. Whether such a dead layer exists at all, and if so, whether it is an intrinsic property of an ideal metal–insulator interface or a result of processing issues such as defects and strains, are controversial questions. Here we present fully ab initio calculations of the dielectric properties of realistic SrRuO3/SrTiO3/SrRuO3 nanocapacitors, and show that the observed dramatic capacitance reduction is indeed an intrinsic effect. We demonstrate the existence of a dielectric dead layer by calculating the dielectric profile across the interface and analyse its origin by extracting the ionic and electronic contributions to the electrostatic screening. We establish a correspondence between the dead layer and the hardening of the collective SrTiO3 zone-centre polar modes, and determine the influence of the electrode by repeating our calculations for Pt/SrTiO3/Pt capacitors. Our results provide practical guidelines for minimizing the deleterious effects of the dielectric dead layer in nanoscale devices.

Microwave Characteristics of (Zr, Sn)TiO4 and BaO‐PbO‐Nd2O3‐TiO2 Dielectric Resonators

Abstract: The microwave characteristics of two dielectric resonator materials were investigated. This research included (Zr, Sn)TiO4, a material having the characteristics of a dielectric constant K= 38, Q= 7000 at 7 GHz, and temperature coefficient of resonant frequency τf, = 0 ppm/°C. The investigation determined the relations between the dielectric loss and micro-structures of this ceramic. Analysis by X-ray microanalyzer made it clear that the addition of Fe2O3 increased the dielectric loss of this ceramic because the Fe ions diffused into the grain. The other material investigated was BaO-PbO-Nd2O3-TiO2, a ceramic having a dielectric constant of K= 88, Q= 5000 at 1 GHz, and τf= 0 ppm/°C. As this ceramic has a very high dielectric constant, it is useful for applications at frequencies <1 GHz.

Gate Dielectric Chemical Structure−Organic Field-Effect Transistor Performance Correlations for Electron, Hole, and Ambipolar Organic Semiconductors

Abstract: This study describes a general approach for probing semiconductor−dielectric interfacial chemistry effects on organic field-effect transistor performance parameters using bilayer gate dielectrics. Organic semiconductors exhibiting p-/n-type or ambipolar majority charge transport are grown on six different bilayer dielectric structures consisting of various spin-coated polymers/HMDS on 300 nm SiO2/p+-Si, and are characterized by AFM, SEM, and WAXRD, followed by transistor electrical characterization. In the case of air-sensitive (generally high LUMO energy) n-type semiconductors, dielectric surface modifications induce large variations in the corresponding OTFT performance parameters although the film morphologies and microstructures remain similar. In marked contrast, the device performance of air-stable n-type and p-type semiconductors is not significantly affected by the same dielectric surface modifications. Among the bilayer dielectric structures examined, nonpolar polystyrene coatings on SiO2 having ...

Terahertz dielectric properties of polymers

Abstract: The terahertz dielectric properties of polymers were characterized by transmission terahertz time domain spectroscopy (THz-TDS) in the frequency range extending from 0.2 to 3.0 THz. The terahertz absorption spectra, the refractive indices and the dielectric functions of various polymer materials were measured and compared. The variation of the refractive index of the polymers was less than 6 %, ranging from 1.4 to 1.8, within the investigated frequency range, but the absorption properties of the polymers showed very different frequency-dependent behaviors. The loss mechanism for terahertz radiation in polymers is discussed by correlating the absorption coefficients and the loss tangents (tan {delta}) of the materials.

Ferroelectric metal-organic framework with a high dielectric constant.

Abstract: Hydrothermal reaction of (l)-N-(4'-cyanobenzy)-(S)-proline with CdCl2 as a Lewis acid catalyst and NaN3 gives colorless block compound 1, in which 1 displays a complicated 3D framework. Ferroelectric and dielectric property measurements reveal that 1 exhibits physical properties comparable to that of a typical ferroelectric compound with a dipole relaxation process and a dielectric constant of ca. 38.6 that makes it, by definition, a high dielectric material.

Interface-induced phenomena in polarization response of ferroelectric thin films

Abstract: This article reviews the existing theoretical models describing the interface-induced phenomena which affect the switching characteristics and dielectric properties of ferroelectric thin films. Three groups of interface-induced effects are addressed—namely, “passive-layer-type” effects, ferroelectric-electrode contact potential effects, and the poling effect of the ferroelectric-electrode interface. The existing experimental data on dielectric and switching characteristics of ferroelectric thin film capacitors are discussed in the context of the reviewed theories. Special attention is paid to the case of internal bias field effects.

Electrical Properties and Depolarization Temperature of (Bi1/2Na1/2)TiO3–(Bi1/2K1/2)TiO3 Lead-free Piezoelectric Ceramics

Abstract: The piezoelectric properties of a solid solution of the binary system, x(Bi1/2Na1/2)TiO3–(1-x)(Bi1/2K1/2)TiO3 [BNKT100x; x=0.50–0.98] were investigated, focusing on depolarization temperature, Td. Fine piezoelectric properties in lead-free piezoelectric ceramics were obtained near the morphotropic phase boundary (MPB) composition between the rhombohedral and tetragonal structures, and the highest electromechanical coupling factor, k33, and piezoelectric constant, d33, were 0.56 for BNKT84 and 157 pC/N for BNKT80, respectively. However, the Td of BNKT80 was low (174 °C). The Td of the MPB composition was low, and the Td near the MPB composition was sharply decreased. It is thought that BNKT70 is a candidate composition for lead-free actuator applications owing to its relatively large piezoelectric constant, d33 (126 pC/N), dynamic d33 (214 pm/V), and high depolarization temperature, Td (206 °C). In this study, we determined depolarization temperature, Td, from the temperature dependence of dielectric and piezoelectric properties.

Flexoelectricity of barium titanate

Abstract: Flexoelectricity was investigated as a function of temperature in paraelectric and ferroelectric phases of barium titanate ceramic. The flexoelectric coefficient μ12 was measured dynamically at small level of strain gradients. μ12 is around 5μC∕m in orthorhombic phase, rises to about 10μC∕m at room temperature, and peaks at ∼50μC∕m near tetragonal-cubic phase transition point. The coupling effect between mechanical strain gradient and electric polarization is found to be nonlinearly enhanced by high dielectric permittivity and domain contribution in barium titanate. In inhomogeneously strained ferroelectrics, mechanical gradient field may impact electric polarization in a way analogous to electric field.

Perovskite (Na0.5K0.5)1−x(LiSb)xNb1−xO3 lead-free piezoceramics

Abstract: Lead-free potassium sodium niobate piezoelectric ceramics substituted with lithium and antimony (Na0.5K0.5)1−x(LiSb)xNb1−xO3 have been synthesized by conventional solid state sintering method. Compositionally engineered around the orthorhombic-tetragonal polymorphic phase transition, the dielectric and piezoelectric properties were further enhanced with the addition of lithium and antimony substituted into the perovskite structure. The combined effects of lithium and antimony additions resulted in a downward shift in the orthorhombic-tetragonal (TO-T) without significantly reducing TC. The dielectric, piezoelectric, and electromechanical properties were found to be e∕e0>1300, d33>260pC∕N, and kp>50%, while maintaining low dielectric loss. The enhanced polarizability associated with the polymorphic TO-T transition and high TC transition (∼390°C) should provide a wide range of temperature operation.

Sintering and Electrical Properties of Lead-Free Na0.5K0.5NbO3 Piezoelectric Ceramics

Abstract: Lead-free Na0.5K0.5NbO3 (NKN) piezoelectric ceramics were fairly well densified at a relatively low temperature under atmospheric conditions. A relative density of 96%–99% can be achieved by either using high-energy attrition milling or adding 1 mol% oxide additives. It is suggested that ultra-fine starting powders by active milling or oxygen vacancies and even liquid phases from B-site oxide additives mainly lead to improved sintering. Not only were dielectric properties influenced by oxide additives, such as the Curie temperature (Tc) and dielectric loss (D), but also the ferroelectricity was modified. A relatively large remanent polarization was produced, ranging from 16 μC/cm2 for pure NKN to 23 μC/cm2 for ZnO-added NKN samples. The following dielectric and piezoelectric properties were obtained: relative permittivity ɛT33/ɛ0=570–650, planar mode electromechanical coupling factor, kp=32%–44%, and piezoelectric strain constant, d33=92–117 pC/N.

Effect of Ba doping on magnetic, ferroelectric, and magnetoelectric properties in mutiferroic BiFeO3 at room temperature

Abstract: Ba doped BiFeO3 compounds were prepared by a solid-state reaction. X-ray diffraction showed that Bi1−xBaxFeO3 was single phase up to x=0.25. These samples exhibited magnetism and ferroelectricity simultaneously at room temperature. The magnetoelectric coupling was evidenced by the increase of the dielectric constant with the increase of the applied magnetic field. For Bi0.75Ba0.25FeO3 with ΔH=8kOe, the values of [er(H)−er(0)]∕er(0) are 1.7% and 1% for 80 and 300K, respectively.

Electric properties of tissues

Abstract: 1. INTRODUCTIONThe electrical properties of biological tissues and cell sus-pensions have been of interest for over a century for manyreasons. They determine the pathways of current flowthrough the body and, thus, are very important in theanalysis of a wide range of biomedical applications such asfunctional electrical stimulation and the diagnosis andtreatment of various physiological conditions with weakelectric currents, radio-frequency hyperthermia, electro-cardiography, and body composition. On a more funda-mental level, knowledge of these electrical properties canlead to an understanding of the underlying basic biologicalprocesses. Indeed, biological impedance studies have longbeen important in electrophysiology and biophysics; one ofthe first demonstrations of the existence of the cell mem-brane was based on dielectric studies on cell suspensions(1).To analyze the response of a tissue to electric stimula-tion, we need data on the specific conductivities and rel-ative permittivities of the tissues or organs. A microscopicdescription of the response is complicated by the variety ofcell shapes and their distribution inside the tissue as wellas the different properties of the extracellular media.Therefore, a macroscopic approach is most often used tocharacterize field distributions in biological systems.Moreover, even on a macroscopic level, the electrical prop-erties are complicated. They can depend on the tissue ori-entation relative to the applied field (directionalanisotropy), the frequency of the applied field (the tissueis neither a perfect dielectric nor a perfect conductor), orthey can be time- and space-dependent (e.g., changes intissue conductivity during electropermeabilization).2. BIOLOGICAL MATERIALS IN AN ELECTRIC FIELDThe electrical properties of any material, including bio-logical tissue, can be broadly separated into two catego-ries: conducting and insulating. In a conductor, theelectric charges move freely in response to the applicationof an electric field, whereas in an insulator (dielectric), thecharges are fixed and not free to move. A more detaileddiscussion of the fundamental processes underlying theelectrical properties of tissue can be found in Foster andSchwan (2).If a conductor is placed in an electric field, charges willmove within the conductor until the interior field is zero.In the case of an insulator, no free charges exist, so netmigration of charge does not occur. In polar materials,however, the positive and negative charge centers in themolecules do not coincide. An electric dipole moment, p,issaid to exist. An applied field, E

Plasmonic field enhancement and SERS in the effective mode volume picture

Abstract: The controlled creation of nanometric electromagnetic field confinement via surface plasmon polariton excitations in metal/insulator/metal heterostructures is described via the concept of an effective electromagnetic mode volume Veff. Extensively used for the description of dielectric microcavities, its extension to plasmonics provides a convenient figure of merit and allows comparisons with dielectric counterparts. Using a one-dimensional analytical model and three-dimensional finite-difference time-domain simulations, it is shown that plasmonic cavities with nanometric dielectric gaps indeed allow for physical as well as effective mode volumes well below the diffraction limit in the gap material, despite significant energy penetration into the metal. In this picture, matter-plasmon interactions can be quantified in terms of quality factor Q and Veff, enabling a resonant cavity description of surface enhanced Raman scattering.

Conformational flexibility, internal hydrogen bonding, and passive membrane permeability: successful in silico prediction of the relative permeabilities of cyclic peptides.

Abstract: We report an atomistic physical model for the passive membrane permeability of cyclic peptides The computational modeling was performed in advance of the experiments and did not involve the use of “training data” The model explicitly treats the conformational flexibility of the peptides by extensive conformational sampling in low (membrane) and high (water) dielectric environments The passive membrane permeabilities of 11 cyclic peptides were obtained experimentally using a parallel artificial membrane permeability assay (PAMPA) and showed a linear correlation with the computational results with R2 = 096 In general, the results support the hypothesis, already well established in the literature, that the ability to form internal hydrogen bonds is critical for passive membrane permeability and can be the distinguishing factor among closely related compounds, such as those studied here However, we have found that the number of internal hydrogen bonds that can form in the membrane and the solvent-expose

Laser-matter interaction in the bulk of a transparent solid: confined microexplosion and void formation

Abstract: We present here the experimental and theoretical studies of a single femtosecond laser pulse interaction inside a bulk of transparent media (sapphire, glass, polymer). This interaction leads to the drastic transformations in a solid resulting in a void formation inside a dielectric. The laser pulse energy is absorbed within a volume of approximately $0.15\phantom{\rule{0.3em}{0ex}}\mathrm{\ensuremath{\mu}}{\mathrm{m}}^{3}$ creating a pressure and temperature comparable to that in the core of a strong multi-kilo-tons explosion. The material within this volume is rapidly atomized, ionized, and converted into a tiny super-hot dense cloud of expanding plasma that generates strong shock and rarefaction waves which result in the formation of a void, whose diameter is $\ensuremath{\sim}200\phantom{\rule{0.3em}{0ex}}\mathrm{nm}$ (for a $100\phantom{\rule{0.3em}{0ex}}\mathrm{nJ}$ pulse in sapphire). The way this structure forms can be understood from high-temperature plasma hydrodynamics. We demonstrate that unique states of matter characterized by temperatures $\ensuremath{\sim}{10}^{5}\phantom{\rule{0.3em}{0ex}}\mathrm{K}$, heating rates up to the ${10}^{18}\phantom{\rule{0.3em}{0ex}}\mathrm{K}∕\mathrm{s}$, and pressures more than 100 times the strength of any material were created using a standard table-top laser in well-controlled laboratory conditions. We discuss the properties of the laser-affected solid and possible routes of laser-affected material transformation to the final state long after the pulse end. These studies will find application for the design of new materials and three-dimensional optical memory devices, and for formation of photonic band-gap crystals.

Electromechanical coupling in nonpiezoelectric materials due to nanoscale nonlocal size effects: Green’s function solutions and embedded inclusions

Abstract: In a piezoelectric material, an applied uniform strain can induce an electric polarization (or vice versa). Crystallographic considerations restrict this technologically important property to noncentrosymmetric systems. It has been shown both mathematically and physically that a nonuniform strain can potentially break the inversion symmetry and induce polarization in nonpiezoelectric materials. The coupling between strain gradients and polarization, and conversely between strain and polarization gradients, is investigated in this work. While the conventional piezoelectric property is nonzero only for certain select materials, the nonlocal coupling of strain and electric field gradients is (in principle) nonzero for all dielectrics, albeit manifesting noticeably only at the nanoscale, around interfaces or in general in the vicinity of high field gradients. Based on a field theoretic framework accounting for this phenomena, we (i) develop the fundamental solutions (Green's functions) for the governing equations, and (ii) motivated by eventual applications for quantum dots, solve the general embedded mismatched inclusion problem with explicit results for the spherical and cylindrical shape. Expectedly, our results for the aforementioned problems are size dependent and indicate generation of high electric fields reaching values of approximately hundreds of kV/m in selected sizes and locations---even in isotropic centrosymmetric nonpiezoelectric materials.