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Annick Loiseau

Researcher at Université Paris-Saclay

Publications -  132
Citations -  3960

Annick Loiseau is an academic researcher from Université Paris-Saclay. The author has contributed to research in topics: Carbon nanotube & Boron nitride. The author has an hindex of 35, co-authored 132 publications receiving 3271 citations. Previous affiliations of Annick Loiseau include Centre national de la recherche scientifique.

Papers
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Production and processing of graphene and related materials

Claudia Backes, +148 more
TL;DR: In this article, the authors present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures, adopting a 'hands-on' approach, providing practical details and procedures as derived from literature and from the authors' experience, in order to enable the reader to reproduce the results.
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Ab initio calculations of the lattice dynamics of boron nitride nanotubes

TL;DR: In this paper, the phonons in boron nitride nanotubes using density functional perturbation theory in the local density approximation were evaluated based on the nonsymmorphic rod-group symmetry of the tubes, the Raman and infrared-active modes at the G point of the one-dimensional Brillouin zone were evaluated.
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Synthesis of highly nitrogen-doped multi-walled carbon nanotubes

TL;DR: A new synthesis route for nitrogen doped carbon nanotubes (CNx) based on the aerosol method is presented, and a strong correlation between the N/C ratio and morphology of the tubes is observed.
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Boron-nitride and boron-carbonitride nanotubes: synthesis, characterization and theory

TL;DR: In this article, a joint experimental and theoretical overview of the synthesis techniques and properties of boron-nitride (BN) and Boron carbonitride (BCN) nanotubes is presented.
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Synthesis of long carbon nanotubes filled with Se, S, Sb and Ge by the arc method

TL;DR: In this paper, the possibility of forming continuous nanowires in carbon nanotubes by the arc-discharge method was investigated for the elements of group B which are of interest in the semiconductor field.