H
Haitong Li
Researcher at Stanford University
Publications - 53
Citations - 2447
Haitong Li is an academic researcher from Stanford University. The author has contributed to research in topics: Resistive random-access memory & Neuromorphic engineering. The author has an hindex of 19, co-authored 53 publications receiving 1678 citations. Previous affiliations of Haitong Li include Peking University.
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Journal ArticleDOI
Recommended Methods to Study Resistive Switching Devices
Mario Lanza,H.-S. Philip Wong,Eric Pop,Daniele Ielmini,Dimitri Strukov,B. C. Regan,Luca Larcher,Marco A. Villena,Jianhua Yang,Ludovic Goux,Attilio Belmonte,Yuchao Yang,Francesco Maria Puglisi,Jinfeng Kang,Blanka Magyari-Köpe,Eilam Yalon,Anthony J. Kenyon,Mark Buckwell,Adnan Mehonic,Alexander L. Shluger,Haitong Li,Tuo-Hung Hou,Boris Hudec,Deji Akinwande,Ruijing Ge,Stefano Ambrogio,Juan Bautista Roldán,Enrique Miranda,Jordi Suñé,Kin Leong Pey,Xing Wu,Nagarajan Raghavan,Ernest Y. Wu,Wei Lu,Gabriele Navarro,Weidong Zhang,Huaqiang Wu,Run-Wei Li,Alexander W. Holleitner,Ursula Wurstbauer,Max C. Lemme,Ming Liu,Shibing Long,Qi Liu,Hangbing Lv,Andrea Padovani,Paolo Pavan,Ilia Valov,Xu Jing,Tingting Han,Kaichen Zhu,Shaochuan Chen,Fei Hui,Yuanyuan Shi +53 more
TL;DR: This manuscript describes the most recommendable methodologies for the fabrication, characterization, and simulation of RS devices, as well as the proper methods to display the data obtained.
Journal ArticleDOI
Electronic synapses made of layered two-dimensional materials
Yuanyuan Shi,Yuanyuan Shi,Xianhu Liang,Bin Yuan,Victoria Chen,Haitong Li,Fei Hui,Zhouchangwan Yu,Fang Yuan,Fang Yuan,Eric Pop,H.-S. Philip Wong,Mario Lanza +12 more
TL;DR: It is shown that multilayer hexagonal boron nitride (h-BN) can be used as a resistive switching medium to fabricate high-performance electronic synapses, enabling the emulation of a range of synaptic-like behaviour, including both short- and long-term plasticity.
Journal ArticleDOI
A Physics-Based Compact Model of Metal-Oxide-Based RRAM DC and AC Operations
Peng Huang,Xiaoyan Liu,Bing Chen,Haitong Li,Yi Jiao Wang,Yexin Deng,Kang Liang Wei,Lang Zeng,Bin Gao,Gang Du,Xing Zhang,Jinfeng Kang +11 more
TL;DR: In this article, a physics-based compact model of metal-oxide-based resistive-switching random access memory (RRAM) cell under dc and ac operation modes is presented.
Proceedings ArticleDOI
Brain-inspired computing exploiting carbon nanotube FETs and resistive RAM: Hyperdimensional computing case study
Tony F. Wu,Haitong Li,P. Huang,Abbas Rahimi,Jan M. Rabaey,H.-S. Philip Wong,Max M. Shulaker,Subhasish Mitra +7 more
TL;DR: An end-to-end brain-inspired hyperdimensional (HD) computing nanosystem, effective for cognitive tasks such as language recognition, using heterogeneous integration of multiple emerging nanotechnologies using monolithic 3D integration of carbon nanotube field-effect transistors.
Journal ArticleDOI
A SPICE Model of Resistive Random Access Memory for Large-Scale Memory Array Simulation
TL;DR: In this article, a SPICE model of oxide-based resistive random access memory (RRAM) for dc and transient behaviors is developed based on the conductive filament evolution model and implemented in large-scale array simulation.