K
Karl Opsomer
Researcher at Katholieke Universiteit Leuven
Publications - 92
Citations - 2528
Karl Opsomer is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Atomic layer deposition & Germanide. The author has an hindex of 24, co-authored 88 publications receiving 2178 citations. Previous affiliations of Karl Opsomer include IMEC & Ghent University.
Papers
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Journal ArticleDOI
Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices.
Umberto Celano,Ludovic Goux,Attilio Belmonte,Karl Opsomer,Alexis Franquet,Andreas Schulze,Christophe Detavernier,Christophe Detavernier,Olivier Richard,Hugo Bender,Malgorzata Jurczak,Wilfried Vandervorst +11 more
TL;DR: This Letter reports for the first time on the three-dimensional (3D) observation of the shape of the conductive filament and concludes that the dynamic filament-growth is limited by the cation transport.
Journal ArticleDOI
Germanium MOSFET Devices: Advances in Materials Understanding, Process Development, and Electrical Performance
David P. Brunco,B. De Jaeger,Geert Eneman,Jerome Mitard,Geert Hellings,Alessandra Satta,Valentina Terzieva,Laurent Souriau,Frederik Leys,Geoffrey Pourtois,Michel Houssa,Gillis Winderickx,E. Vrancken,Sonja Sioncke,Karl Opsomer,G. Nicholas,Matty Caymax,Andre Stesmans,J. Van Steenbergen,Paul W. Mertens,Marc Meuris,M.M. Heyns +21 more
TL;DR: In this article, thin, strained epi-Si is examined as a passivation of the Ge/gate dielectric interface, with an optimized thickness found at 6 monolayers.
Journal ArticleDOI
High-k dielectrics for future generation memory devices (Invited Paper)
Jorge A. Kittl,Karl Opsomer,Mihaela Popovici,Nicolas Menou,Ben Kaczer,X.P. Wang,Christoph Adelmann,M. A. Pawlak,K. Tomida,Aude Rothschild,Bogdan Govoreanu,Robin Degraeve,Marc Schaekers,Mohammed Zahid,Annelies Delabie,Johan Meersschaut,Wouter Polspoel,Sergiu Clima,Geoffrey Pourtois,Werner Knaepen,Christophe Detavernier,Valery V. Afanas'ev,Tom E. Blomberg,Dieter Pierreux,J. Swerts,P. Fischer,J. W. Maes,D. Manger,Wilfried Vandervorst,Thierry Conard,Alexis Franquet,Paola Favia,Hugo Bender,Bert Brijs,S. Van Elshocht,Malgorzata Jurczak,J. Van Houdt,Dirk Wouters +37 more
TL;DR: The requirements and development of high-k dielectric films for application in storage cells of future generation flash and dynamic random access memory (DRAM) devices are reviewed in this article.
Proceedings ArticleDOI
High performance Ge pMOS devices using a Si-compatible process flow
Paul Zimmerman,G. Nicholas,B. De Jaeger,Ben Kaczer,Andre Stesmans,Lars-Ake Ragnarsson,David P. Brunco,Frederik Leys,Matty Caymax,Gillis Winderickx,Karl Opsomer,Marc Meuris,M.M. Heyns +12 more
TL;DR: In this article, a Si-compatible process flow without the incorporation of strain was demonstrated using Ge transistors with gate lengths ranging from 10 mum down to 0.125 mum, the shortest ever reported.
Journal ArticleDOI
Influence of the Cu-Te composition and microstructure on the resistive switching of Cu-Te/Al2O3/Si cells
Ludovic Goux,Karl Opsomer,Robin Degraeve,Robert Muller,Christophe Detavernier,Dirk J. Wouters,M. Jurczak,L. Altimime,Jorge A. Kittl +8 more
TL;DR: In this paper, the authors explore the influence of the CuxTe1-x layer composition (0.2, 0.3, and 0.7) on program control and filament stability.