M
Muhammad Mustafa Hussain
Researcher at King Abdullah University of Science and Technology
Publications - 333
Citations - 6943
Muhammad Mustafa Hussain is an academic researcher from King Abdullah University of Science and Technology. The author has contributed to research in topics: Silicon & Metal gate. The author has an hindex of 39, co-authored 330 publications receiving 5355 citations. Previous affiliations of Muhammad Mustafa Hussain include University of California, Berkeley & SEMATECH.
Papers
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Journal ArticleDOI
Memristor-based memory
TL;DR: The read operation of memristor-based memories is investigated and a new technique for solving the sneak paths problem by gating the memory cell using a three-terminal memistor device is introduced.
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Soft Actuators for Soft Robotic Applications: A Review
Nazek El-Atab,Rishabh Bhooshan Mishra,Rishabh Bhooshan Mishra,Fhad Al-Modaf,Lana Joharji,Aljohara A. Alsharif,Haneen Alamoudi,Marlon Diaz,Nadeem Qaiser,Muhammad Mustafa Hussain,Muhammad Mustafa Hussain +10 more
TL;DR: In this article, the authors acknowledge generous support of the King Abdullah University of Science and Technology (KAUST), and acknowledge Dr Joanna M. Nassar, Dr Galo A. Torres, Dr Mohamed T. Ghoneim, Davide Priante, Jhonathan P. Rojas, Sigurdur T. Thoroddsen, and Prof. Boon S. Ooi who contributed to the “pause-embed-resume” data.
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CMOS-Technology-Enabled Flexible and Stretchable Electronics for Internet of Everything Applications.
TL;DR: How CMOS-technology-enabled flexible and stretchable electronics can be developed is discussed, with particular focus on bulk monocrystalline silicon (100).
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Dipole model explaining high-k/metal gate field effect transistor threshold voltage tuning
Paul Kirsch,P. Sivasubramani,Jiacheng Huang,Chadwin D. Young,Manuel Quevedo-Lopez,Huang-Chun Wen,Huang-Chun Wen,Husam N. Alshareef,K.J. Choi,K.J. Choi,Chanro Park,K. Freeman,Muhammad Mustafa Hussain,Gennadi Bersuker,H.R. Harris,Prashant Majhi,Prashant Majhi,Rino Choi,P. Lysaght,B. H. Lee,H.-H. Tseng,Rajarao Jammy,Rajarao Jammy,T. S. Böscke,Daniel J. Lichtenwalner,Jesse S. Jur,Angus I. Kingon +26 more
TL;DR: In this paper, an interface dipole model explaining threshold voltage tuning in HfSiON gated n-channel field effect transistors (nFETs) is proposed, which is very similar to the trends in dopant electronegativity (EN) and ionic radius (r) expected for a interfacial dipole mechanism.
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Silicon nanotube field effect transistor with core-shell gate stacks for enhanced high-performance operation and area scaling benefits.
TL;DR: The proposed silicon nanotube field effect transistor offers the true potential to be an ideal blend for quantum ballistic transport study of device property control by bottom-up approach and high-density integration compatibility using top-down state-of-the-art complementary metal oxide semiconductor flow.