N
Nathan S. Lewis
Researcher at California Institute of Technology
Publications - 730
Citations - 72550
Nathan S. Lewis is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Semiconductor & Silicon. The author has an hindex of 112, co-authored 720 publications receiving 64808 citations. Previous affiliations of Nathan S. Lewis include Lawrence Berkeley National Laboratory & Massachusetts Institute of Technology.
Papers
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Journal ArticleDOI
Conditions Under Which Heterogeneous Charge-Transfer Rate Constants Can Be Extracted from Transient Photoluminescence Decay Data of Semiconductor/Liquid Contacts As Determined by Two-Dimensional Transport Modeling
TL;DR: In this article, an extensive series of digital simulations of the decay dynamics of photoexcited charge carriers at a semiconductor/liquid interface has been performed using the two-dimensional simulation code ToSCA.
Patent
Semiconductor wire array structures, and solar cells and photodetectors based on such structures
Michael D. Kelzenberg,Harry A. Atwater,Ryan M. Biggs,Shannon W. Boettcher,Nathan S. Lewis,Jan Petykiewicz +5 more
TL;DR: In this paper, a structure comprising an array of semiconductor structures, an infill material between the semiconductor materials, and one or more light-trapping elements is described.
Journal Article
Opportunities in semiconductor photoelectrochemistry
Ian L. Abrahams,Louis G. Casagrande,Mark D. Rosenblum,Mary L. Rosenbluth,Patrick G. Santangelo,Bruce J. Tufts,Nathan S. Lewis +6 more
TL;DR: In this article, the problem of photoelectrochimie des semiconducteurs sont rapportes: developpement de cellules solaires a jonction n-Si/liquide; croissance photoelectronchimique des cellules de type MIS; etude de la chimie interfaciale des materiaux III-V; processus chimiques pour minimiser les pertes de recombinaison aux joints de grain and aux etats de surface des interfaces de Si et de GaAs.
Journal ArticleDOI
Trends in the open-circuit voltage of semiconductor/liquid interfaces: Studies of n-AlxGa1-xAs/CH3CN-Ferrocene+/0 and n-AlxGa1-xAs/KOH-Se-/2-(aq) junctions
TL;DR: In this paper, the energy conversion efficiency of the n-type photoelectrodes was analyzed in the presence of CH{sub 3}CN-ferrocene{sup +/0} and KOH-Se{sup {minus}/2{minus}}(aq) electrolytes.