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Nathan S. Lewis
Researcher at California Institute of Technology
Publications - 730
Citations - 72550
Nathan S. Lewis is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Semiconductor & Silicon. The author has an hindex of 112, co-authored 720 publications receiving 64808 citations. Previous affiliations of Nathan S. Lewis include Lawrence Berkeley National Laboratory & Massachusetts Institute of Technology.
Papers
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Journal ArticleDOI
Principles and Applications of Semiconductor Photoelectrochemistry.
Ming X. Tan,Paul E. Laibinis,SonBinh T. Nguyen,J. M. Kesselmann,Colby E. Stanton,Nathan S. Lewis +5 more
Patent
Use of basic polymers in carbon black composite vapor detectors to obtain enhanced sensitivity and classification performance for volatile fatty acids
TL;DR: In this paper, a sensor provided by the disclosure comprises an amine-containing material, which is useful to detect carboxylic-containing analytes such as fatty acids.
Journal ArticleDOI
Isotopically Selective Quantification by UPLC-MS of Aqueous Ammonia at Submicromolar Concentrations Using Dansyl Chloride Derivatization
TL;DR: In this paper, the authors explored the use of electrocatalysts to convert nitrogen (N) to ammonia (NH) at ambient temperature and pressure in an environmentally friendly manner.
Journal ArticleDOI
Growth, Characterization, and Electrochemical Properties of Doped n-Type KTaO3 Photoanodes
Irene E Paulauskas,Jordan E. Katz,Gerald Earle Jellison Jr,Nathan S. Lewis,Lynn A. Boatner,Gilbert M. Brown +5 more
TL;DR: The effects of compositionally induced changes on the semiconducting properties, optical response, chemical stability, and overall performance of KTaOO_3 photoanodes in photoelectrochemical (PEC) cells have been investigated in this paper.
Journal ArticleDOI
Measurement of barrier heights of semiconductor/liquid junctions using a transconductance method: Evidence for inversion at n-Si/CH3OH-1,1′-dimethylferrocene+/0 junctions
TL;DR: In this article, the electrical conductance between these p^+-contact areas was then used to probe the minority carrier concentration in the near-surface region of the n-type Si.