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Nathan S. Lewis
Researcher at California Institute of Technology
Publications - 730
Citations - 72550
Nathan S. Lewis is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Semiconductor & Silicon. The author has an hindex of 112, co-authored 720 publications receiving 64808 citations. Previous affiliations of Nathan S. Lewis include Lawrence Berkeley National Laboratory & Massachusetts Institute of Technology.
Papers
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Evaluation of sputtered nickel oxide, cobalt oxide and nickel–cobalt oxide on n-type silicon photoanodes for solar-driven O2(g) evolution from water
TL;DR: In this article, thin films of nickel oxide (NiOx), cobalt oxide (CoOx) and nickel-cobalt oxides (NiCoO) were sputtered onto n-Si(111) surfaces to produce a series of integrated, protected Si photoanodes that did not require deposition of a separate heterogeneous electrocatalyst for water oxidation.
Patent
Method for reuse of wafers for growth of vertically-aligned wire arrays
TL;DR: In this paper, a Si wafer was used for the formation of wire arrays by transferring the wire arrays to a polymer matrix, reusing a patterned oxide for several array growths, and finally polishing and reoxidizing the wafer surface and reapplying the patterning oxide.
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Further studies of metal-metal bonded oligomers of rhodium(I) isocyanide complexes. Crystal structure analysis of octakis(phenyl isocyanide)dirhodium bis(tetraphenylborate)
TL;DR: In this paper, Elektronenabsorptionsspektren der Komplexe (I) in Losung bei Raumtemp folgen nicht dem Beet-Gesetz.
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Optically tunable mesoscale CdSe morphologies via inorganic phototropic growth
Kathryn R. Hamann,Azhar I. Carim,Madeline C. Meier,Jonathan R. Thompson,Nicolas A. Batara,Ivan S. Yermolenko,Harry A. Atwater,Nathan S. Lewis +7 more
TL;DR: Inorganic phototropic growth using only spatially conformal illumination generated Se-Cd films that exhibited precise light-defined mesoscale morphologies including highly ordered, anisotropic, and periodic ridge and trench nanotextures over entire macroscopic substrates as discussed by the authors.
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Growth of Epitaxial ZnSn x Ge 1-x N 2 Alloys by MBE
TL;DR: In general, MBE growth has provided desired improvements in electronic mobility, epitaxy, and crystal quality that provide encouragement for the continued study of ZnSnxGe1−xN2 alloys.