Nathan S. Lewis

TL;DR: In this article, the authors reported the fabrication of Mg/Zn 3 P 2 Schottky diodes with VOC values reaching 550 mV, JSC values up to 21.8 mA/cm2, and photovoltaic efficiency reaching 4.5%.

TL;DR: In this article, a photoelectrochemical anodization technique has been used to fabricate n-Si/insulator/metal (MIS) diodes with improved electrical properties.

TL;DR: Computer modeling of the morphologies of films grown photoelectrochemically using light from two simultaneous sources that had mutually different linear polarizations successfully reproduced the experimental morphologies and quantitatively agreed with the pattern orientations observed experimentally, indicating that the resultant morphology is a function of all illumination inputs despite differing polarizations.

TL;DR: In this paper, the stability of n-Si/CH-3-OH photoelectrochemical cells has been investigated experimentally by monitoring the branching ratio between two competing reactions at a semiconductor/liquid interface: hole transfer from a Si photoanode to the electron donor in solution vs passivation of the Si photograph through hole transfer to water.

TL;DR: In this paper, high-resolution X-ray photoelectron spectroscopy (XPS) revealed that the functionalization chemistry was consistent with the reactivity of surficial hydroxyl groups.