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Nathan S. Lewis
Researcher at California Institute of Technology
Publications - 730
Citations - 72550
Nathan S. Lewis is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Semiconductor & Silicon. The author has an hindex of 112, co-authored 720 publications receiving 64808 citations. Previous affiliations of Nathan S. Lewis include Lawrence Berkeley National Laboratory & Massachusetts Institute of Technology.
Papers
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Synthesis and characterization of mixed methyl/allyl monolayers on Si(111).
TL;DR: The formation of mixed methyl/allyl monolayers has been accomplished through a two-step halogenation/alkylation reaction on Si(111) surfaces, and the mixed-monolayer surfaces retained the beneficial properties of CH(3)-Si(111).
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Crystalline nickel, cobalt, and manganese antimonates as electrocatalysts for the chlorine evolution reaction
TL;DR: In this paper, it was shown that NiSb_2O_x, CoSb2Ox, and MnSb-2O-x are moderately active catalysts for the chlor-alkali evolution reaction.
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Combined Theoretical and Experimental Study of Band-Edge Control of Si through Surface Functionalization
TL;DR: In this paper, a combination of density functional theory (DFT) and many-body perturbation theory was used to investigate the band-edge positions of H-, Cl-, Br-, methyl-, and ethyl-terminated Si(111) surfaces.
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Analysis of the Published Calorimetric Evidence for Electrochemical Fusion of Deuterium in Palladium
Gordon M. Miskelly,Michael J. Heben,Amit Kumar,Reginald M. Penner,Michael J. Sailor,Nathan S. Lewis +5 more
TL;DR: In this paper, an estimate of the raw data that are the basis for the claims of excess power production by the electrochemical charging of palladium in deuterium oxide (D_2O) is given.
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630‐mV open circuit voltage, 12% efficient n‐Si liquid junction
TL;DR: In this paper, the first experimental observation of a semiconductor/liquid junction whose open circuit voltage Voc is controlled by bulk diffusion/recombination processes is reported, where photoelectrochemical oxide formation is used to passivate surface recombination sites at the n-Si/CH3OH interface and minimizes deleterious effects of pinning of the Fermi level at the Si/CH 3OH junction.