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Nathan S. Lewis

Researcher at California Institute of Technology

Publications -  730
Citations -  72550

Nathan S. Lewis is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Semiconductor & Silicon. The author has an hindex of 112, co-authored 720 publications receiving 64808 citations. Previous affiliations of Nathan S. Lewis include Lawrence Berkeley National Laboratory & Massachusetts Institute of Technology.

Papers
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Proceedings ArticleDOI

Array-based vapor sensing using chemically sensitive, polymer composite resistors

TL;DR: In this article, the authors describe the construction of simple, low-power, broadly responsive vapor sensors, with each element containing either carbon black or poly(pyrrole) as the conducting phase mixed with one of several different organic polymers as the insulating phase.
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Control of the pH-Dependence of the Band Edges of Si(111) Surfaces Using Mixed Methyl/Allyl Monolayers

TL;DR: The open-circuit potentials of p-Si/((MV^(2+)/MV+))(aq)) junctions with Si(111) surfaces functionalized with H−, CH_(3)-, CH-(2)CHCH_(2)−, or mixed CH-(3)-/CH(2)-terminated n-Si(111)-monolayers have been investigated as the solution pH was changed from 2.5 to 11.9 V as discussed by the authors.
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Detection of organic vapors and NH3(g) using thin-film carbon black–metallophthalocyanine composite chemiresistors

TL;DR: In this paper, thin-film chemiresistive vapor sensors have been fabricated using composites of carbon black (CB) and metallophthalocyanines, which exhibited large, rapid, and reversible relative differential resistance changes upon exposure to a series of test organic vapors.
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Measurement of interfacial charge-transfer rate constants at n-type InP/CH3OH junctions

TL;DR: In this paper, the steady-state current density vs potential methods have been used to measure interfacial electron-transfer rate constants at n-type indium phosphide/liquid junctions.
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Radial PN junction, wire array solar cells

TL;DR: In this article, the potential of low-cost catalysts such as Cu and Ni to fabricate Si wire arrays with potentially higher minority-carrier lifetimes than is possible with a Au catalyst is discussed.