N
Nikolai N. Ledentsov
Researcher at Russian Academy of Sciences
Publications - 297
Citations - 10963
Nikolai N. Ledentsov is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Quantum dot & Quantum dot laser. The author has an hindex of 42, co-authored 283 publications receiving 10676 citations. Previous affiliations of Nikolai N. Ledentsov include Max Planck Society & Technical University of Berlin.
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Quantum dot heterostructures
TL;DR: In this paper, the growth and structural characterisation of self-organized Quantum Dots are discussed. But they do not consider the model of ideal and real quantum Dots.
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InGaAs-GaAs quantum-dot lasers
Dieter Bimberg,N. Kirstaedter,Nikolai N. Ledentsov,Zh. I. Alferov,Petr S. Kop'ev,Victor M. Ustinov +5 more
TL;DR: The InGaAs-GaAs QD emission can be tuned between 0.95 /spl mu/m and 1.37 /spl middot/cm/sup -2/m at 300 K as mentioned in this paper.
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Spontaneous ordering of arrays of coherent strained islands.
TL;DR: In this paper, the authors studied the energy of an array of coherent strained islands on a lattice-mismatched substrate and showed that the contribution of the edges of islands to the elastic relaxation energy always has a minimum as a function of the size of an island, and the total energy may have a minimum at an optimum size.
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Energy relaxation by multiphonon processes in InAs/GaAs quantum dots
R. Heitz,M. Veit,Nikolai N. Ledentsov,Axel Hoffmann,Dieter Bimberg,V. M. Ustinov,P. S. Kop’ev,Zh. I. Alferov +7 more
TL;DR: In this paper, the authors demonstrate inelastic phonon scattering to be the dominant intradot carrier-relaxation mechanism in self-organized InAs/GaAs quantum dots.
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InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
Victor M. Ustinov,Nikolay A. Maleev,A. E. Zhukov,A. R. Kovsh,A. Yu. Egorov,A. V. Lunev,B. V. Volovik,Igor Krestnikov,Yu. G. Musikhin,N. A. Bert,P. S. Kop’ev,Zh. I. Alferov,Nikolai N. Ledentsov,Dieter Bimberg +13 more
TL;DR: In this article, the lateral size of InAs islands has been found to be approximately 1.5 times larger as compared to the InAs/GaAs case, whereas the island heights and surface densities were close in both cases.