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Peter H. Beton

Researcher at University of Nottingham

Publications -  272
Citations -  11056

Peter H. Beton is an academic researcher from University of Nottingham. The author has contributed to research in topics: Quantum tunnelling & Magnetic field. The author has an hindex of 53, co-authored 266 publications receiving 9576 citations. Previous affiliations of Peter H. Beton include University of Manchester & Queen Mary University of London.

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Controlling molecular deposition and layer structure with supramolecular surface assemblies

TL;DR: This work uses hydrogen bonding to guide the assembly of two types of molecules into a two-dimensional open honeycomb network that then controls and templates new surface phases formed by subsequently deposited fullerene molecules, and finds that the open network acts as aTwo-dimensional array of large pores of sufficient capacity to accommodate several large guest molecules.
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Tuning the Bandgap of Exfoliated InSe Nanosheets by Quantum Confinement

TL;DR: The optical properties of InSe nanosheets differ qualitatively from those reported recently for exfoliated transition metal dichalcogenides and indicate a crossover from a direct to an indirect band gap semiconductor when the InSe flake thickness is reduced to a few nanometers.
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Vernier templating and synthesis of a 12-porphyrin nano-ring

TL;DR: Vernier complexes can solve the problem of covalent synthesis of challenging targets by establishing Vernier templating as a powerful new strategy for the synthesis of large monodisperse macromolecules.

Production and processing of graphene and related materials

Claudia Backes, +148 more
TL;DR: In this article, the authors present an overview of the main techniques for production and processing of graphene and related materials (GRMs), as well as the key characterization procedures, adopting a 'hands-on' approach, providing practical details and procedures as derived from literature and from the authors' experience, in order to enable the reader to reproduce the results.
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High Broad-Band Photoresponsivity of Mechanically Formed InSe–Graphene van der Waals Heterostructures

TL;DR: High broad‐band photoresponsivity of mechanically formed InSe–graphene van der Waals heterostructures is achieved by exploiting the broad‐ band transparency of graphene, the direct bandgap of InSe, and the favorable band line up of In Se with graphene.