Actel

About: Actel is a based out in . It is known for research contribution in the topics: Antifuse & Field-programmable gate array. The organization has 364 authors who have published 402 publications receiving 12674 citations.

Process ESD protection devices for use with antifuses

Abstract: A process electrostatic discharge ("ESD") protection device is incorporated on a chip with the antifuses that it is designed to protect and is formed as close in time as possible to the deposition of the antifuse material layer (the layer being protected) so that ESD protection is available at all practical stages of processing. According to a first aspect of the invention, an ESD protection device is formed by exposing edges of an antifuse bottom electrode during the antifuse cell open mask/etch step, It is biased on during processing. A sharp corner of the electrode and a deep aspect ratio provide degrade antifuse performance for the protection cell (resulting in reduced breakdown voltage and increased leakage current) and, as designed, the protection cell will rupture before other cells because it has a lower breakdown voltage. Once the protection cell ruptures, it will continue to conduct and protect other antifuses from ESD damage. When processing is complete, the protection cell is biased off and has no effect on the remaining antifuses. According to a second aspect of the present invention, a deep valley topography is created under a bottom electrode of the protection cell. Because the cell is deeper than the other antifuse cells while retaining the same cell opening size, the step coverage within the protection cell will be reduced and the protection cell will have a lower breakdown voltage than the regular antifuse cells formed with it. In all other respects, it operates as set forth regarding the first aspect of the invention.

Circuits for testing the function circuit modules in an integrated circuit

Abstract: A circuit for providing 100% observability and controllability of inputs and outputs of any function circuit module in an array of function circuit modules includes circuitry for placing a test data bit into a selected one of any of the function circuit modules, and circuitry for reading the output of a selected one of any of the function circuit modules.

Split gate memory cell for programmable circuit device

Abstract: A split-gate memory cell, includes an n-channel split-gate non-volatile memory transistor having a source, a drain, a select gate over a thin oxide, and a control gate over a non-volatile gate material and separated from the select gate by a gap. A p-channel pull-up transistor has a drain coupled to the drain of the split-gate non-volatile memory transistor, a source coupled to a bit line, and a gate. A switch transistor has first and second source/drain diffusions, and a gate coupled to the drains of the split-gate non-volatile memory transistor and the p-channel pull-up transistor. An inverter has an input coupled to the second source/drain diffusion of the switch transistor, and an output. A p-channel level-restoring transistor has a source coupled to a supply potential, a drain coupled to the first source/drain diffusion of the switch transistor and a gate coupled to the output of the inverter.

Block level routing architecture in a field programmable gate array

Abstract: An FPGA architecture has top, middle and low levels. The top level of the architecture is an array of the B16×16 tiles arranged in a rectangular array and enclosed by I/O blocks on the periphery. On each of the four sides of a B16×16 tile, and also associated with each of the I/O blocks is a freeway routing channel. A B16×16 tile in the middle level of hierarchy is a sixteen by sixteen array of B 1 blocks. The routing resources in the middle level of hierarchy are expressway routing channels M 1 , M 2 , and M 3 including groups of interconnect conductors. At the lowest level of the semi-hierarchical FPGA architecture, there are block connect (BC) routing channels, local mesh (LM) routing channels, and direct connect (DC) interconnect conductors. Each BC routing channel is coupled to an expressway tab to provide access for each B 1 block to the expressway routing channels M 1 , M 2 , and M 3 , respectively. Each BC routing channel has nine interconnect conductors which are grouped into three groups of three interconnect conductors. Each group of three interconnect conductors is connected to a first side of a Extension Block (EB) 3×3 switch matrix. A second side of each EB 3×3 switch matrix is coupled to the E-tab. Between adjacent B 1 blocks, in both the horizontal and vertical directions, the leads on the second side of a first EB 3×3 switch matrix may be coupled to the leads on the second side of second EB3×3 switch matrix by BC criss-cross extension.

Cache storage priority

Abstract: A data processing machine includes an instruction unit that decodes and organizes a flow of instructions for processing data. In response to certain instructions, the instruction unit generates requests for storage unit resources. In addition, results generated in the instruction unit in response to certain instructions are supplied for storage in the storage unit. The storage unit selects in response to priority logic from completing requests for storage unit resources, including a high speed cache storing data, and a plurality of storage ports for transferring data from the result register to the high speed cache. Each of the storage ports generates requests for access to the high speed cache to transfer the data stored in the respective store ports to the cache. Storage unit priority is determined in part by predicting the fullness of the storage ports.