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Institution

Actel

About: Actel is a based out in . It is known for research contribution in the topics: Antifuse & Field-programmable gate array. The organization has 364 authors who have published 402 publications receiving 12674 citations.


Papers
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Patent
William C. Plants1, Nikhil Mazumder1, Arunangshu Kundu1, James Joseph1, Wayne W. Wong1 
06 Mar 2000
TL;DR: In this article, a deskew mode for aligning a reference clock that passes through a clock distribution tree to a feedback by adding additional delay to the feedback clock is provided.
Abstract: A DLL provides a deskew mode for aligning a reference clock that passes through a clock distribution tree to a feedback by adding additional delay to the feedback clock to align the feedback clock with reference clock at one cycle later. A 0 ns clock-to-out mode is provided by adding additional delay to account for an input buffer into a feedback path. The feedback clock can be doubled by a clock doubler with 50% duty cycle adjustment disposed in the feedback path. Flexible timing is aligning the reference clock to the feedback clock is obtained with additional delay elements disposed in the feedback and reference clock paths.

25 citations

Journal ArticleDOI
TL;DR: In this article, a technique of two-step PECVD oxide deposition was used to obtain a dielectric strength as high as 13 MV/cm for very thin insulating oxide.
Abstract: Antifuse samples with very thin insulating oxide were fabricated using a technique of two-step PECVD oxide deposition. Dielectric strength as high as 13 MV/cm was obtained for our samples. Defect density and uniformity have been improved in this way. The on-state resistance of the programmed antifuses shows a stronger dependence on the oxide thickness when it was programmed at the lower current than when it was programmed at the higher current. >

25 citations

Patent
Douglas C. Galbraith1
19 May 1992
TL;DR: In this paper, a method for isolating a first low-voltage circuit node comprising an output of a lowvoltage device from a second circuit node which carries high programming voltages during programming of user-programmable interconnect elements includes the step of raising the normal power supply voltage provided to the low voltages to an intermediate level lower than the programming voltage but high enough to protect the outputs of the low voltage devices from damage.
Abstract: A method for isolating a first low-voltage circuit node comprising an output of a low-voltage device from a second circuit node which carries high programming voltages during programming of user-programmable interconnect elements includes the step of raising the normal power supply voltage provided to the low-voltage devices to an intermediate level lower than the programming voltage but high enough to protect the outputs of the low voltage devices from damage. The output to be protected is caused to assume a desired state and is then inhibited from changing state during the programming cycle. Programming voltage is then applied to the low voltage circuit node.

25 citations

Patent
30 Nov 1993
TL;DR: In this article, the authors propose a circuit for providing 100% observability and controllability of inputs and outputs of any function circuit module in an array of function circuit modules.
Abstract: A circuit for providing 100% observability and controllability of inputs and outputs of any function circuit module in an array of function circuit modules includes circuitry for placing a test data bit into a selected one of any of the function circuit modules, and circuitry for reading the output of a selected one of any of the function circuit modules.

25 citations

Proceedings ArticleDOI
02 Jun 1992
TL;DR: In this article, cross-section TEM photos that capture the conductive channel of oxide-nitride-oxide (ONO) films after electric breakdown are discussed, revealing a single crystal or polycrystal channel with a dome-shaped cap depending on the breakdown current.
Abstract: Cross-section TEM photos that capture the conductive channel of oxide-nitride-oxide (ONO) films after electric breakdown are discussed. The photos reveal a single crystal or polycrystal channel with a dome-shaped cap depending on the breakdown current. The implications of this structure for electric characteristics is analyzed with a spherical thermal-electric model. When ONO films are used as antifuse on FPGA product, the resistance of the antifuse can be controlled by choosing a sufficiently large programming current level and the resistance remains stable during 1000 h of burn-in at 125 degrees C and 5.75 V. Negligible change in delay time along many different data paths was observed. >

24 citations


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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20151
20131
20124
20113
201019
200912