Actel

About: Actel is a based out in . It is known for research contribution in the topics: Antifuse & Field-programmable gate array. The organization has 364 authors who have published 402 publications receiving 12674 citations.

High-yield methods for programming antifuses

Abstract: A method for programming an antifuse of a selected technology type comprises the steps of (1) applying a preselected number of programming pulses to the antifuse at a voltage less than the maximum voltage at which antifuses of that selected technology type are known to program, (2) testing to see if the antifuse has been programmed, (3) increasing the programming voltage by a preselected increment and applying the preselected number of programming pulses to the antifuse if the antifuse has not been programmed, and (4) repeating steps (2) and (3) until the antifuse has been programmed. The antifuse may be identified as defective if it does not program after a selected number of attempts.

Radiation Hardened FPGA Technology for Space Applications

Abstract: High performance, high density, radiation hardened Field Programmable Gate Arrays (FPGAs) are in great demand for military and space applications to reduce design cost and cycle time. BAE Systems has implemented radiation hardened 150nm bulk CMOS process technology in its foundry located in Manassas, VA to support such advanced product needs. BAE Systems and Actel Corporation are collaborating to bring the next-generation radiation hardened FPGA product for space applications to market. This paper will describe the rad hard AX-250 FPGA and the electrical and radiation test data on rad hard 150nm product hardware, FPGA device structures and anti-fuse arrays, as part of the overall FPGA product installation and qualification effort.

Electrically programmable antifuse element and method of forming it

Abstract: An electrically programmable antifuse element incorporates a composite interlayer of dielectric material and amorphous silicon interposed between two electrodes. The lower electrode may be formed from a refractory metal such as tungsten. Preferably, a thin layer of titanium is deposited over the tungsten layer and its surface is then oxidized to form a thin layer of titanium oxide which serves as the dielectric material of the composite dielectric/amorphous silicon interlayer. A layer of amorphous silicon is then deposited on top of the titanium oxide dielectric to complete the formation of the composite interlayer. A topmost layer of a refractory metal such as tungsten is then applied over the amorphous silicon to form the topmost electrode of the antifuse.

Integrated circuit including programmable logic and external-device chip-enable override control

Abstract: An integrated circuit device includes a programmable logic block, a monitoring input, a condition-sensing circuit coupled to the monitoring input and configured to generate a condition-sensed signal at an output in response to sensing a condition at the monitoring input, a first digital input, a first digital output, and a gating circuit configured in the programmable logic block and coupled between the first digital input and the first digital output. The gating circuit has a gating input coupled to the condition-sensing circuit and generates an output. The output is related to an input state of the first digital input in the absence of the condition-sensed signal and assumes an override state in the presence of the condition-sensed signal.

Method for fabricating an electrically programmable antifuse

Abstract: A method for fabricating the antifuse of the present invention comprises the steps of forming a lower antifuse electrode; forming a relatively thick interlayer dielectric layer over the surface of the lower antifuse electrode; forming a masking layer, preferably a photoresist, including an aperture therein having a first area over the interlayer dielectric layer; performing a first vertical etching step on the interlayer dielectric layer to a first selected depth; enlarging the aperture in the masking layer until it has a second area; performing a final vertical etching step on the interlayer dielectric layer to expose the upper surface of the lower electrode. Depending on the thickness of the interlayer dielectric, additional enlarging steps and vertical etching steps may be performed prior to the final vertical etching step which exposes the upper surface of the lower electrode. An aperture having a staircase profile is thereby formed, the aperture having a number of steps thus reducing and/or eliminating cusping and/or thinning at the corner and bottom of the antifuse cell opening allowing for the uniform deposit of dielectric and upper antifuse electrode materials.