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Institution

Actel

About: Actel is a based out in . It is known for research contribution in the topics: Antifuse & Field-programmable gate array. The organization has 364 authors who have published 402 publications receiving 12674 citations.


Papers
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Patent
24 Dec 1991
TL;DR: In this article, the authors present an antifuse structure according to a first aspect of the present invention is programmed by snap-back breakdown and includes a semiconductor substrate of a first conductivity type, an insulating layer over the surface of the semiconductor substrates, a conductive gate disposed over the insulating layers, spacer elements disposed at the outer edges of the conductive gates, spaced-apart first and second lightly doped regions of a second conductivity types disposed in the semiconductors, the third and fourth more heavily doped areas of the second
Abstract: An antifuse structure according to a first aspect of the present invention is programmed by snap-back breakdown and includes a semiconductor substrate of a first conductivity type, an insulating layer over the surface of the semiconductor substrate, a conductive gate disposed over the insulating layer, spacer elements disposed at the outer edges of the conductive gate, spaced-apart first and second lightly doped regions of a second conductivity type disposed in the semiconductor substrate, the first and second lightly doped regions aligned to the edges of the conductive gate, third and fourth more heavily doped regions of the second conductivity type disposed in the semiconductor substrate, the third and fourth regions contiguous with the first and second regions, respectively, and aligned to the edges of the spacer elements, and a conductive filament in the insulating layer connecting the conductive gate to one of the second and fourth doped regions. An antifuse element according to a second aspect of the present invention is programmed by gate-aided breakdown and includes a semiconductor substrate of a first conductivity type, an insulating layer over the surface of the semiconductor substrate, a conductive gate disposed over the insulating layer, a spacer element disposed at a selected outer edge of the conductive gate, a lightly doped region of a second conductivity type disposed in the semiconductor substrate aligned to the selected outer edge of the conductive gate, a more heavily doped region of the second conductivity type disposed in the semiconductor substrate aligned to the edge of the spacer element, and a conductive filament in the insulating layer connecting the conductive gate to one of the doped region.

1 citations

Proceedings ArticleDOI
Sinan Kaptanoglu1
05 May 1996
TL;DR: This work presents a method similar to Chew and Lien's, but with better accuracy and far fewer coefficients, achieved by taking advantage of the symmetry of the problem under the permutation group S/sub N/ of N objects.
Abstract: Timing delays for FPGAs with segmented channels can be accurately estimated by most SPICE-like circuit simulators. Such simulators however, are too slow to be of any use inside an iterative automatic timing driven layout (ATDL) engine, which may repeat the computations millions of times. Other methods such as half-perimeter approximation are very easy and fast to compute, but accuracy is very poor for these kinds of FPGAs. The method published by Chew and Lien [1994] overcomes these problems; however, it introduces a very large number of fitted parameters, and its accuracy decreases for more complicated topologies. We present a method similar to Chew and Lien's, but with better accuracy and far fewer coefficients. This is achieved by taking advantage of the symmetry of the problem under the permutation group S/sub N/ of N objects.

1 citations

Patent
Poongyeub Lee1, Ming-Chi Liu1
21 Sep 2007
TL;DR: In this article, an assembly buffer and bitline driver circuit has two inverters cross-coupled to form a assembly buffer, and a high-voltage latch is formed from cross coupled highvoltage inverters.
Abstract: An assembly buffer and bitline driver circuit has two inverters cross-coupled to form an assembly buffer. A high-voltage latch is formed from cross-coupled high-voltage inverters. A first low-voltage n-channel MOS transistors is coupled to the high-voltage latch to selectively ground the output of the first high-voltage inverter and a second low-voltage n-channel MOS transistors is coupled to the high-voltage latch to selectively ground the output of the other high-voltage inverter. The gate of the first low-voltage n-channel MOS transistor is coupled to one output of one of the inverters forming the assembly buffer latch and the gate of the second low-voltage n-channel MOS transistor is coupled to the output of the other one of the inverters forming the assembly buffer latch. A pre-load circuit is used to prevent data in an unselected circuit from being disturbed.

1 citations

Patent
10 Jun 2011
TL;DR: An enhanced performance field programmable gate array integrated circuit as discussed by the authors consists of an enhanced performance FPGA and other functional circuitry such as a mask-programmable gate arrays in the same integrated circuit.
Abstract: An enhanced performance field programmable gate array integrated circuit comprises a field programmable gate array and other functional circuitry such as a mask-programmable gate array in the same integrated circuit. A circuit interface provides communication between the field programmable gate array, the mask-programmable gate array and the integrated circuit I/O.
Reference EntryDOI
27 Dec 1999
TL;DR: The sections in this article are Technology Mapping, Partitioning, placement, routing, and future Trends in FPGA CAD Research and Development.
Abstract: The sections in this article are 1 Technology Mapping 2 Partitioning 3 Placement 4 Routing 5 Commercial CAD Software 6 Future Trends in FPGA CAD Research and Development

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Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20151
20131
20124
20113
201019
200912