International Rectifier

About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.

Deep trench super switch device

Abstract: A deep trench super switch device has a plurality of trenches, each of the trenches containing a gate electrode polysilicon layer on top of a plurality of stacked conductive floating polysilicon layers, the remainder of each of the trenches being filled with a nonconductive material.

Current sense shunt resistor circuit

Abstract: Current through a wire is sensed with a shunt resistor and a sense resistor in a current divider circuit. The values of the shunt resistor and sense resistor are related to provide a specified gain ratio to increase a dynamic range of current measurement. The sense resistor is a trimmable resistor, the configuration of which can be discerned from a look-up table based on a level of precision needed for current measurement. The two resistors can also be related by thermal coefficients to improve linearity of current measurements.

Low inductance bond-wireless co-package for high power density devices, especially for IGBTs and diodes

Abstract: A power semiconductor package that includes at least two semiconductor devices electrically coupled to one another through a common metallic web.

Schottky diode with adjusted barrier height and process for its manufacture

Abstract: A schottky diode is formed of a sintered barrier metal layer which contacts a lightly doped silicon surface. The barrier metal layer is formed of palladium as well as a small quantity of another metal whose choice is determined by the desired value of the barrier height of the resulting schottky diode. A small quantity of platinum is selected to increase the barrier height, and a small quantity of nickel is selected to decrease the barrier height. A contact metal, which may include a tri-metal layer of titanium, nickel and silver, is formed atop the sintered schottky barrier layer. The resulting process also allows for control of reverse hot leakage current.

Top drain MOSFET

Abstract: A power MOSFET is disclosed in which the source and drain regions are reversed from their usual positions and the drain is on the top of the chip (the surface containing the junction pattern diffusions) and the source is on the bottom of the chip. A plurality of spaced trenches are formed in the top surface. One group of trenches contain gate polysilicon and a gate oxide to control an invertible channel region along the trench. A second group of the trenches have a buried source contact at their bottoms which are connected between the N source material to the P channel region to short out a parasitic bipolar transistor.