International Rectifier

About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.

Chip-scale package

Abstract: A substrate having upper and lower surfaces, the upper surface including a periphery defined by first and second spaced apart side edges and front and rear spaced apart edges; a power semiconductor die disposed on the upper surface of the substrate, the die including a top surface on which at least a first metalized surface is disposed and a bottom surface; a plurality of conductive pads disposed only at the second side edge of the substrate; and a plurality of wire bonds extending from the first metalized surface to the plurality of conductive pads.

CFL ballast with passive valley fill and crest factor control

Abstract: According to the disclosed embodiment of the invention, a circuit and method for stabilizing an operating characteristic of a compact fluorescent lamp driven by a ballast circuit having an operating frequency controlled by a component value, may comprise a first circuit connected to said ballast circuit for applying the component value thereto; and a second circuit connected to the ballast circuit for changing the component value so as to stabilize the operating characteristic. The operating characteristic may be power, current, voltage or crest factor for example. The second circuit changes the component value in response to a bus voltage of the ballast circuit and includes a switching device such as a transistor responsive to the bus voltage. In the disclosed embodiment the component value is a resistance, the first circuit comprises a first resistor, the second circuit comprises a second resistor, and the switching device selectively connects the second resistor to said ballast circuit in response to the bus voltage exceeding a predetermined threshold.

Silicide gate process for trench MOSFET

Abstract: The tops of the conductive polysilicon gates of a trench device have a layer of a silicide such as titanium silicide which is more conductive than the polysilicon gate, thereby reducing gate resistance.

Graded concentration epitaxial substrate for semiconductor device having resurf diffusion

Abstract: The epitaxial substrate of a semiconductor chip device has a resurf diffusion in at least one of its isolated wells in the device chip surface. The wells are separated by junction diffusions. The thickness of the epitaxial layer is reduced by placing an increased percentage of its total charge for given a breakdown voltage (punch-through voltage) in the lower portion of the layer.

Top drain MOSFET with thickened oxide at trench top

Abstract: A top drain MOSFET has active trenches with an enlarged width at the top of each trench which has a thicker oxide than the gate oxide adjacent the channel region. The thicker oxide at the top of the trench reduces Q gd . The thicker oxide at the top of the active trench also reduces the electronic field in the drain drift region.