scispace - formally typeset
Search or ask a question
Institution

International Rectifier

CompanyWrexham, Wales [Cymru GB-CYM], United Kingdom
About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.


Papers
More filters
Patent
24 Jun 2004
TL;DR: In this paper, an electronic ballast control is used to detect lamp faults by conditioning a lamp feedback with a DC offset to provide a simple threshold comparison to determine if the lamp exceeds specified operational boundaries.
Abstract: A multi-function feedback sense input in an electronic ballast control indicates a number of lamp faults on the basis of lamp parameters exceeding specified thresholds An end of life detection is achieved by conditioning a lamp feedback with a DC offset to provide a simple threshold comparison to determine if the lamp exceeds specified operational boundaries An open filament, absent lamp or broken cathode is detected on the same feedback sense by detecting an open circuit in the lamp filament and driving the sense feedback to a shutdown state in the event of a filament open circuit The ballast control includes a current sense feedback (70) for detecting overcurrent conditions as well as lamp faults so that the control detects an end of life condition, lamp absence, broken lamp, open filament, broken cathode, overcurrent, hardswitching or failure to ignite fault with a minimum number of feedback sensors The ballast control provides a number of protections with a simplified circuit to reduce cost and improve functionality of the electronic ballast control

32 citations

Patent
30 Aug 2007
TL;DR: In this article, a method and apparatus for equalizing phase currents in multiphase switching power converters is described in which pairs of stored digital values that directly or indirectly control the values of the currents in the conversion phases are altered in equal and opposite increments.
Abstract: A method and apparatus for equalizing phase currents in multiphase switching power converters is described in which pairs of stored digital values that directly or indirectly control the values of the currents in the conversion phases are altered in equal and opposite increments. In one embodiment the digital values being controlled are the relative on-times of the power switches in pairs of conversion phase. The method is stepwise and repetitive in the sense that, instead of calculating or inferring offset values that seek to bring all of the currents in the phases toward equality, pairs of phase currents are altered repetitively and iteratively, using equal and opposite steps in the values of their respective control variables, until the phases are all sufficiently close in value. The steps may be of fixed size or the step size may be selectively modified to optimize the convergence time of the algorithm.

32 citations

Patent
30 Apr 2007
TL;DR: A multi-chip module that includes a conductive element connecting at least two semiconductor devices is referred to as a MCM as discussed by the authors, which includes enhancements for improving the mechanical coupling between the conductive elements and the molded housing of the MCM.
Abstract: A multi-chip module that includes a conductive element connecting at least two semiconductor devices, the conductive element including enhancements for improving the mechanical coupling between the conductive element and the molded housing of the MCM

32 citations

Patent
15 Oct 1996
TL;DR: A vertical conduction Schottky device with a reverse voltage rating in excess of 400 volts uses an aluminum barrier metal in contact with an N - epitaxial silicon surface as mentioned in this paper.
Abstract: A vertical conduction Schottky device having a reverse voltage rating in excess of 400 volts uses an aluminum barrier metal in contact with an N - epitaxial silicon surface A diffused P + guard ring surrounds the barrier metal contact and is spaced therefrom by a small gap which is fully depleted at a low reverse voltage to connect the ring to the barrier contact under reverse voltage conditions Lifetime killing is used for the body of the diode

32 citations

Patent
01 Jun 2007
TL;DR: In this paper, a synchronous rectifier of a switching stage including a high-side control transistor and a low-side synchronous transistor coupled at a switching node, the switching stage receiving an input voltage and providing a controlled output voltage at an output node.
Abstract: A circuit for reducing switching losses in a synchronous rectifier of a switching stage including a high-side control transistor and a low-side synchronous transistor coupled at a switching node, the switching stage receiving an input voltage and providing a controlled output voltage at an output node. The circuit including a first circuit portion for sensing waveshape edges of a first signal at a gate terminal of the low-side synchronous transistor and a first voltage to determine a delay between the waveshape edge of the first signal and the waveshape edge of the first voltage; and a second circuit portion for calibrating the first signal and the first voltage to align the waveshape edge of the first signal and the waveshape edge of the first voltage, with an optional offset to achieve minimal power loss.

32 citations


Authors

Showing all 768 results

NameH-indexPapersCitations
Robert S. Brown130124365822
Praveen Jain5962711528
Edwin L. Piner421625020
Jerry W. Johnson371093522
Steffen Rupp361574848
Kevin J. Linthicum361174334
Andrei Vescan312073308
Thomas Gehrke28812753
Pradeep Rajagopal27652282
Thomas J. Ribarich24831547
Daniel M. Kinzer23822054
Bo Yang21403331
Johan Strydom21752159
Michael A. Briere191421200
Robert Joseph Therrien19561441
Network Information
Related Institutions (5)
Texas Instruments
39.2K papers, 751.8K citations

74% related

Motorola
38.2K papers, 968.7K citations

73% related

Intel
68.8K papers, 1.6M citations

73% related

Fujitsu
75K papers, 827.5K citations

73% related

Samsung
163.6K papers, 2M citations

72% related

Performance
Metrics
No. of papers from the Institution in previous years
YearPapers
20221
20201
20192
20183
20175
201611