International Rectifier

About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.

Method and apparatus to reduce dynamic Rdson in a power switching circuit having a III-nitride device

Abstract: A method of preventing the Rdson of a III-V Nitride power switching circuit from varying over time. The method includes biasing the switch to a pre-bias voltage level just below turn ON when the switch is OFF, wherein traps are discharged when the switch is biased to the pre-bias voltage level just below turn ON and the varying of the Rdson over time due to traps is reduced. The method can be employed in DC-DC converter circuits having III-V Nitride control and synchronous switches connected at a switching node.

Driver circuit with an increased power factor

Abstract: According to one exemplary embodiment, driver circuit coupled between an AC line and a load includes a first semiconductor switch interposed between a bus voltage and a resonant circuit and a second semiconductor switch interposed between the resonant circuit and a ground, where the resonant circuit drives the load. In the driver circuit, the bus voltage has a shape substantially corresponding to a shape of a rectified AC line voltage, thereby increasing a power factor of the driver circuit. The driver circuit can further include a full-bridge rectifier disposed between the resonant circuit and the load. The load can include at least one LED.

Polysilicon fet built on silicon carbide diode substrate

Abstract: A polysilicon FET is built atop a SiC diode to form a MOSgated device. The polysilicon FET includes an invertible layer of polysilicon atop the surface of a SiC diode which has spaced diode diffusions. A MOSgate is formed on the polysilicon layer and the energization of the gate causes an inversion channel in the invertible layer to form a majority carrier conduction path from a top source electrode to a bottom drain electrode. Forward voltage is blocked in part by the polysilicon FET and in larger part by the depletion of the silicon carbide area between the spaced diode diffusions.

Metallizing process and structure for semiconductor devices

Abstract: A metallizing system for silicon surfaces consists of sequential layers of nickel, chromium, nickel and silver. Approximately 2 microns of the silicon surface are removed prior to metallization to ensure removal of an oxygen-saturated layer of silicon before the first nickel layer is deposited. The assembly is heated sufficiently that the first nickel layer forms a nickel-silicide layer at the silicon surface. The metallizing adheres to bare treated silicon but does not adhere to adjacent oxide coatings and easily lifts off of oxide-coated surfaces. The metallizing is solderable, makes ohmic contact to the silicon, regardless of its conductivity type and survives subsequent alloy processing temperatures.

Low on resistance power MOSFET with variably spaced trenches and offset contacts

Abstract: A power semiconductor device of the trench variety in which the trenches follow a serpentine path.