International Rectifier

About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.

Method to reduce inrush voltage and current in a switching power converter

Abstract: A circuit for minimizing voltage inrush upon startup in a switching power converter having a switching stage including high and low switches connected at a common node, a feedback loop for maintaining a target output voltage, an output capacitor connected between an output node and the ground, an inductor connected between the common node and the output node, and a control circuit having a first error amplifier for providing a first signal based on a comparison of a reference voltage and voltage provided by the feedback loop, the control circuit including a level switch connected between the ground and the common node, the level switch being controlled in accordance with the first signal, wherein a large inrush current flowing into the output capacitor when the circuit is starting up is minimized

Package for High Power Devices

Abstract: A semiconductor device package is formed of DBC in which thinned MOSgated and/or diode die are soldered to the bottom of an etched depression in the upper conductive layer. A via in the insulation layer of the DBC is filled with a conductive material to form a resistive shunt. Plural packages may be formed in a DBC card and may be separated individually or in clusters. The individual packages are mounted in various arrays on a support DBC board and heat sink. Integrated circuits may be mounted on the assembly and connected to the die for control of the die conduction.

Power semiconductor module for LV applications has insulating molded housing providing peripheral frame enclosing conductor frame with terminal surfaces and projecting termination lines

Abstract: The power semiconductor module has an insulating molded housing (50) with open upper and lower sides and a peripheral frame (60) enclosing a number of power semiconductor components (S1-S6), which are coupled together and to conductor terminals. A conductor frame has a number of coplanar conductive terminal surfaces (30,31,32,33,34) with associated termination lines (U,V,W,20,21), fitting through the peripheral frame, the coplanar lower surfaces of the conductor frame terminal surfaces attached to a separate heat sink.

Process of thinning and blunting semiconductor wafer edge and resulting wafer

Abstract: A wafer having a rounded edge is thinned to 100 microns or less, producing a tapered razor like edge The edge is ground to blunt it and reduce danger to personnel and equipment during handling of the wafer

III-nitride power device

Abstract: A III-nitride semiconductor device which includes a barrier body between the gate electrode and the gate dielectric thereof.