International Rectifier

About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.

Digital pwm modulator with fast dynamic response and fine resolution

Abstract: A pulse width (PWM) controller for a voltage converter having at least one switch, an Analog to Digital Converter (ADC) circuit for digitizing inputted state variables including a feedback voltage from an output of the voltage converter and a reference voltage for setting the output of the voltage converter and providing a digital error signal, and a Proportional Integration and Derivation (PID) circuit receiving the digital error signal and providing a digital duty cycle signal. The controller including a Digital to Analog Converter (DAC) circuit for converting the digital duty cycle signal into an analog DAC output signal; and a comparator circuit for comparing a first signal including the DAC output signal with a reference signal for generating a pulse width modulated control signal for controlling the switching of the at least one switch of the voltage converter.

Electronic ballast for cold cathode fluorescent lamp with phase control dimming

Abstract: An electronic ballast for powering a cold cathode fluorescent lamp of an electronic display device comprising: a rectifier coupled to a source of AC power for producing a rectified DC output voltage, a power factor correction circuit receiving the rectified DC output voltage and providing an increased voltage DC bus voltage, an electronic switching circuit comprising at least one electronic switch for switching the DC bus voltage to provide a switched voltage for driving a cold cathode fluorescent lamp, the switched voltage being provided to the lamp through an output stage comprising a resonant LC circuit; and an electronic ballast control circuit for controlling a switching operation of the electronic switching circuit, the electronic ballast being provided in a housing for the electronic display device.

Monolithic Group III-V Power Converter

Abstract: A power arrangement that includes a monolithically integrated III-nitride power stage having III-nitride power switches and III-nitride driver switches.

Control signal generation and power supply circuitry

Abstract: According to one configuration, a controller repeatedly loads a time delay circuit with a predetermined (count) value. The predetermined count value specifies an approximate time delay between activating and/or deactivating high side switch circuitry of one or more phases in the power supply. Based on passing of time as indicated by the time delay circuit, the controller generates control signals to control high side switch circuitry (of a same or different phase) in the power supply. The high side switch circuitry in one or more phases can be successively activated or spaced in time by an approximate amount of time as specified by the predetermined (count) value.

Process of manufacture of ultra thin semiconductor wafers with bonded conductive hard carrier

Abstract: A process is described to enable the manufacture of a thinned (<50 μm semiconductor die) which can employ the use of standard equipment for the manufacture of the wafer and the packaging of the die singulated from the wafer. A standard thickness wafer (350 μm) first has junctions formed in its upper surface, but the surface is not yet metallized and patterned. A rigid front plate is connected to the upper surface by a removable adhesive and the wafer is back ground to its final thickness, for example, less than 50 μm. A back metal and a thick conductive backing plate are then fixed to the back metal. The rigid front plate is then removed and the front surface of the wafer is metallized and patterned. Die singulated from the wafer carry the thick permanent conductive backing plate and may be conventionally packaged as prior art 350 μm die. The wafer can initially be partially diced.