International Rectifier

About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.

Gallium nitride materials including thermally conductive regions

Abstract: The invention includes providing gallium nitride materials including thermally conductive regions and methods to form such materials. The gallium nitride materials may be used to form semiconductor devices. The thermally conductive regions may include heat spreading layers and heat sinks. Heat spreading layers distribute heat generated during device operation over relatively large areas to prevent excessive localized heating. Heat sinks typically are formed at either the backside or topside of the device and facilitate heat dissipation to the environment. It may be preferable for devices to include a heat spreading layer which is connected to a heat sink at the backside of the device. A variety of semiconductor devices may utilize features of the invention including devices on silicon substrates and devices which generate large amounts of heat such as power transistors.

Hydrogen implant for buffer zone of punch-through non EPI IGBT

Abstract: An IGBT is formed in a thin (less than 250 microns thick) float zone silicon wafer (20) using a hydrogen implant to form an N+ buffer layer (30) at the bottom of the wafer. A weak anode (21) is formed on the bottom of the wafer. A single hydrogen implant, or a plurality of hydrogen implants of progressively shallower depth and increasing dose can be used to form the implant in a diffused float zone wafer. The process may also be used to form an N+ contact region in silicon to permit a good ohmic contact to the silicon for any type device.

High frequency partial boost power factor correction control circuit and method

Abstract: A circuit for providing power factor correction includes a boost converter circuit with a boost inductance and a power factor correction switch and a control circuit. The control circuit provides a pulse width modulated signal to control the on time of a PFC switch, and also includes a power factor correction pulse width modulated device receiving as inputs a rectified AC input voltage, a DC bus voltage, a signal proportional to the current through the inductor and a reference current signal. The power factor correction pulse width modulated device also includes a pulse width modulated generator operable to provide the pulse width modulated signal to control the on time of the PFC circuit and a pulse width modulated blanking device operable to provide an enable/disable signal to disable the pulse width modulated generator when predetermined conditions are met.

Insulated gate bipolar transistor power module

Abstract: A power module contains IGBT die along with integrated circuit driver chips and opto isolators or isolation transformers within the same module housing. Output terminals are provided which can be interfaced directly to control logic or microprocessors for operating the module. The IGBTs may have current-sensing electrodes to simplify current measurement and control functions.

Closed-loop/dimming ballast controller integrated circuits

Abstract: A novel monolithic electronic ballast controller IC for driving two MOS gated power semiconductors, such as power MOSFETs or IGBTs, connected in a totem pole or half-bridge arrangement. Advantageously, the present invention provides programmable preheat time and current, programmable end-of-life protection, lamp fault protection, over-temperature protection. The first embodiment of the invention is a closed-loop ballast controller IC intended for multiple lamp configurations, with three current-sensing inputs and programmable lamp power. Closed-loop control is accomplished through phase control, or, more specifically, a phase-locked loop (PLL) around a resonant type output stage driving a fluorescent lamp. The second embodiment of the present invention has a similar architecture to that of the first embodiment, with some modifications which allow dimming down to low light levels.