International Rectifier

About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.

Self-oscillating full bridge driver IC

Abstract: A self-oscillating full-bridge driver IC, in which the high-side drivers each have a bootstrap capacitor, and a bootstrap circuit for pre-charging the bootstrap capacitors before starting up the oscillator or supplying control signals to the high-side drivers.

Cycle by cycle synchronous buck converter control based on external clock

Abstract: A DC-DC voltage converter having a switching stage including high- and low-side switches connected in series at a switched node across a DC voltage bus; a control circuit; and a feedback loop connected between an output of the switching stage and an input of the control circuit, the control circuit having a clock signal input and including an error processing circuit coupled to the input for detecting an output of the feedback loop, the control circuit turning OFF the low-side switch and turning ON the high-side switch when the clock signal is detected. The control circuit operates in a cycle-by-cycle operation generating PWM modulation synchronous to the external clock source.

Semiconductor device package and lead frame with die overhanging lead frame pad

Abstract: Semiconductor die are soldered or epoxy bonded to lead frame pads and overhang the pads to reduce thermal differential expansion and contraction stresses applied to the die from the lead frame pad. A plastic housing of standard size is unchanged in dimension, but contains a greater total silicon die area.

A.C. Solid state relay circuit and structure

Abstract: A solid state a.c. relay has two separate and indentical power thyristors connected in anti-parallel arrangement. The power thyristors are optically switched, lateral conduction devices with anode and cathode electrodes on the same surface. Both are switched by illuminating their surface by reflected illumination from an LED. Each thyristor is provided with a respective control circuit which includes a MOSFET transistor for clamping its respective thyristor gate wherever the voltage across the thryistor exceeds a given absolute value or whenever there is a high dV/dt transient across the thyristor. The control circuit for the control transistor includes a capacitance divider, one element of which is the distributed capacitance of the control transistor. The control circuit components can be integrated into the same semiconductor chip which contains the respective power thyristor. Each of the two identical power chips and the LED chip are spaced from one another and mounted on an alumina substrate. Two lead wires are stitch-bonded to the electrode pads of the two chips to connect them in anti-parallel relation, and are then stitch-bonded to two respective conductive sections on the alumina substrate. The chips and the LED are covered with a cap having a reflective interior so that illumination from the LED is reflected toward the chip surfaces. The interior of the cap is filled with a transparent plastic. The assembly is housed in either a single in-line pin housing or dual in-line pin housing and the entire housing is suitably encapsulated.