International Rectifier

About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.

Dimming ballast control circuit

Abstract: A dimming ballast control circuit for driving a ballast power switching circuit powering a gas discharge lamp. The circuit includes a driver circuit for driving high and low side switches of the ballast power switching circuit; a control circuit for driving the driver circuit including an oscillator circuit for providing an oscillating signal to control the frequency of operation of the ballast power switching circuit, the ballast power switching circuit outputting lamp powering pulsed signals; and a dimming control circuit having an input, the dimming control circuit receiving an AC lamp current feedback signal at the input, the dimming control circuit further receiving a DC input voltage reference at the input whereby the DC input voltage reference determines a desired dimming level of the lamp and the AC lamp current feedback signal maintains the lamp brightness at the desired dimming level.

Closed loop active EMI filter for reducing common or differential noise based on an error value

Abstract: An active EMI filter senses current in a ground line or a power transmission line as a voltage cross a capacitor coupled to the line. The EMI filter senses common mode voltage and determines a difference between the common mode voltage and noise to provide an output to drive the difference to zero. The resulting active closed loop EMI filter produces good EMI dampening with greatly increased performance over a current transformer type EMI filter. A voltage regulator for the error amplifier improves noise reduction while increasing filter efficiency. The active EMI filter operates in a wide linear range that is greater than that of an equivalent current transformer circuit, while providing low cost and reliability.

SMT three phase inverter package and lead frame

Abstract: A surface mounted package for semiconductor die has a lead frame with a first and elongated die pad which receives three MOSgated die spaced along its length; second, third and fourth die pads laterally spaced from the first die pad and in a row parallel to the first die pad and receiving respective MOSgated die. A central wire bond receiving pad is disposed between the first pad and the spaced second, third and fourth pads. Wire bonds then connect the die into a three phase inverter circuit. Pin connectors extend through a plastic housing covering the top of the lead frame and are connectable, with the die pads, to the surface of a PCB.

Trench mosfet with field relief feature

Abstract: A trench MOS-gated semiconductor device that includes field relief regions formed below its base region to improve its breakdown voltage, and method for its manufacturing.

1200 V high-side lateral MOSFET in junction-isolated power IC technology using two field-reduction layers

Abstract: A lateral n-channel MOSFET structure in junction-isolated power IC technology using a P-type field-reduction region over an N-type field-reduction region for high-side and low-side switching applications is described. The concept of using two field-reduction layers has been verified by two-dimensional device simulations and by fabricating devices with breakdown voltage in excess of 1200 V. >