International Rectifier

About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.

Reverse battery protection circuit for power switch

Abstract: A circuit for protecting a power switch in the event of a reverse battery connection, wherein the power switch comprises a MOSFET having a body diode and the MOSFET is connected in series with a load, the circuit comprising terminals connected to the circuit and normally connectable to respective positive and negative power potentials of the battery, and the circuit comprising a switching circuit coupled to the terminals such that the switching circuit turns on the power switch in the event that the terminals are connected with a reverse battery connection

Correction circuit for improved load transient response

Abstract: A correction circuit for use in a switched power supply wherein the correction circuit provides a correction signal indicating a duty cycle adjustment necessary to modify pulse width modulation of the power supply such that the output inductor current matches the load current drawn by a load connected to the power supply. The correction circuit may be used in conjunction with feed forward and/or feed back control circuits. The correction circuit may be implemented using either digital or analog circuit components.

Fault protected self-oscillating driver

Abstract: A driver circuit for a transistor provides a soft start feature where pulses provided to the transistor are varied in duration during startup. The driver also provides an overcurrent protection feature for disabling a driver output for a safe period of time when an overcurrent condition is detected. The driver circuit includes an oscillator that produces a saw tooth wave and a narrow width pulse train for determining pulse width and dead time, respectively. The driver circuit may be used in half-bridge or full-bridge drivers.

MOS gated semiconductor device with source metal covering the active gate

Abstract: An MOS gated semiconductor device includes a metal source contact electrode which extends across the top of a overlaying oxide layer that is formed atop the gate electrode. The source metal thus extends over the channel region to provide a physical metal shield against the migration of ionic contaminants that may be present in the plastic device housing, particularly during high temperature operation. The metal shield substantially improves the device characteristics under high temperature bias conditions.

Semiconductor device with pressure connection electrodes and with headers cemented to insulation ring

Abstract: A pressure-assembled device has a premolded insulation ring with slots at each end of the ring which receive flexible header rims. The slots are tapered to automatically center the rims and the rims are cemented in the slots. The upper and lower headers and upper and lower main electrodes are identical in construction and the insulation ring is symmetrical. The same components are used for semiconductor devices with or without control electrodes except that a tube is molded in the insulation ring if the device is to have a control electrode.