International Rectifier

About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.

Common MOSFET process for plural devices

Abstract: A core process is described for the manufacture of a Schottky, MOSFET or Accufet, using a plurality of identical manufacturing steps, including spaced trenches, in a single production line, with the device type to be produced being defined at an implant and diffusion stage for forming very low concentration mesas for a Schottky; higher concentration mesas with source regions for Accufet devices and a channel implant and source implant for a vertical conduction MOSFET.

Driver ic for use with simple microcontrol

Abstract: A driver circuit for driving a switching circuit driving a load, e.g., a gas discharge lamp, the drive circuit comprising an input trigger circuit receiving a pulsed input signal for controlling the generation of two drive signals, a first drive signal driving a high side switch of a half bridge switching circuit and a second drive signal driving a low side switch of the half bridge switching circuit, a circuit for providing a dead time between the first and second drive signals whereby both the first and second drive signals are substantially zero, the input trigger circuit generating a control signal for controlling the generation of the first and second drive signals based on a characteristic of the pulsed input signal and first and second drive circuits for providing the first and second drive signals.

Ultra low Irr fast recovery diode

Abstract: A FRED device having an ultralow Irr employs a contact layer which contacts spaced P diffusions in an N type silicon substrate and also contacts the silicon surface spanning between the P diffusions. The contact layer is formed of a contact having a lower barrier height than the conventional aluminum, and is palladium silicide with a top contact layer of aluminum.

Single stage PFC and power converter unit

Abstract: A power converter provides constant load power while achieving a high power factor in a single stage configuration with reduced component count and ratings. The power converter takes a rectified line input to a switching half-bridge that supplies current to a load. A series combination of shunt switch and capacitor is connected across the load to store energy from the input and supply energy to the load. The switches are operated with conduction angles that achieve constant power supplied to the load while drawing a sinusoidal current in phase with the input voltage to achieve high power factor. The circuit provides a simplified configuration over prior power converters that may be used with a resonant load as part of an electronic ballast or an AC-to-DC converter. The power converter configuration and operation also achieves a low total harmonic distortion on the input line power.

Dynamic gate bias for controlled rectifiers

Abstract: A pickup circuit connected to the main power circuit of a controlled rectifier generates an output signal responsive to the forward rate-of-change-of-voltage across the main terminals of the controlled rectifier. This output signal is then connected to the gate of the controlled rectifier as a negative gate bias, the magnitude of which is related to the rate-of-change-of-forwardvoltage across the controlled rectifier device.