International Rectifier

About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.

Termination design for deep source electrode MOSFET

Abstract: A power semiconductor device that includes a plurality of source trenches that extend to a depth below the gate electrodes and a termination region that includes a termination trench that is as deep as the source trenches.

Process for manufacturing radhard power integrated circuit

Abstract: A high voltage radiation hardened power integrated circuit (PIC) with resistance to TID and SEE radiation effects for application in high radiation environments, such as outer space. TID hardness modification include forming gate oxide layers after high temperature junction processes, adding implant layers to raise the parasitic MOSFET thresholds with respect to native thresholds, and suppressing CMOS drain-to-source and intrawell transistor-to-transistor leakage. In addition, radhard field oxide is utilized. SEE ruggedness is improved by reducing the epi thickness over that of non-radhard devices, and increasing the epi concentration near the substrate junction. A radhard PIC rated to 400 V and capable of operating at 600 V or more is provided. The inventive PIC can withstand 100 krads of TID and a heavy ion Linear Energy Transfer of 37 MeV/(mg/cm 2 ) at full rated voltage.

Multiple ignition high intensity discharge ballast control circuit

Abstract: A ballast control circuit for a high intensity discharge lamp which operates in conjunction with an existing ballast IC, the IR2157-1, and serves to strike the lamp up to 20 times or until the lamp is lit.

Dual-gated group III-V merged transistor

Abstract: There are disclosed herein various implementations of a group III-V merged cascode transistor Such a group III-V merged cascode transistor includes a group III-V body disposed over a substrate and configured to produce a two-dimensional electron gas (2DEG) The group III-V body includes a group III-V barrier layer situated over a group III-V channel layer, and a source electrode and a drain electrode The group III-V merged cascode transistor also includes an enable gate disposed in a recess extending substantially through the group III-V barrier layer, and an operational gate disposed over the group III-V barrier layer, the operational gate not being in physical contact with the enable gate

Power semiconductor device assembly with integrated current sensing and control

Abstract: A semiconductor module has a conductive heat sink base which receives a power semiconductor and a printed circuit board mounted above the heat sink and carrying control circuits for the power semiconductor. A rigid L-shaped terminal connected to one electrode of the power semiconductor is mounted on the base and extends upward and adjacent an edge of the printed circuit board. A Hall sensor is mounted on the printed circuit board and is disposed in and intercepts the magnetic field produced by current in the terminal. Magnetic bodies are mounted on opposite sides of the Hall element to concentrate the magnetic field through the Hall sensor.