International Rectifier

About: International Rectifier is a company organization based out in Wrexham, Wales [Cymru GB-CYM], United Kingdom. It is known for research contribution in the topics: Power semiconductor device & Transistor. The organization has 767 authors who have published 1624 publications receiving 27118 citations.

Protection circuit for power FETs in a half-bridge circuit

Abstract: A small size FET has its drain connected to the gate of a high-side power FET of an N-channel half-bridge circuit and its gate connected to the gate of the low-side power FET of the half-bridge circuit. The source of the small FET is connected to ground. If both the high side and low side power FETs receive gate turn-on signals simultaneously, the protection FET turns on and pulls the gate of the high side FET to ground to turn it off. A layout of the FETs on leadframe segments is disclosed so that the small FET is physically adjacent to the two power FETs such that a very short distance exists between the power FETs and their connection points to the control FET.

Press-fit diode for universal mounting

Abstract: A force-fit diode for high circuit application has a cylindrical constant diameter conductive body which has a tapered top and bottom peripheral edge. An axial conductor extends from one end of the housing. The tapered top and bottom peripheral edges allow the housing to be forced into an opening in the bus, with either the housing bottom or the axial lead being the first to enter the openings.

High side power switch with charge pump and bootstrap capacitor

Abstract: A power switching circuit (10) comprising a power semiconductor switching device (Q1), a charge pump circuit (CHP) having a control input to control whether it is on or off and a charge pump output, the charge pump output being coupled to a control terminal of the power semiconductor switching device, a bootstrap power supply for supplying power to driver circuitry for the power semiconductor switching device, the bootstrap power supply comprising a bootstrap capacitor (CBS) coupled to a charging current source, the bootstrap power supply providing power to the driver circuitry when the power semiconductor switching device is being switched by the driver circuitry in a pulsed mode, and the charge pump (CHP) supplying a control voltage to turn on the power semiconductor switching device (Q1).

Monolithic composite iii-nitride transistor with high voltage group iv enable switch

Abstract: There are disclosed herein various implementations of a monolithically integrated component. In one exemplary implementation, such a monolithically integrated component includes an enhancement mode group IV transistor and two or more depletion mode III-Nitride transistors. The enhancement mode group IV transistor may be implemented as a group IV insulated gate bipolar transistor (group IV IGBT). One or more of the III-Nitride transistor(s) may be situated over a body layer of the group IV IGBT, or the III-Nitride transistor(s) may be situated over a collector layer of the IGBT.

Superjunction IGBT vs. FS IGBT for 200°C operation

Abstract: Adverse effects on the temperature-dependent properties of Insulated Gate Bipolar Transistors (IGBTs) are often observed when the junction temperature exceeds 175°C. It is believed that attempts in enabling the operation of IGBTs at 200°C will inevitably introduce penalties in some electrical properties of the device. Therefore, the trade-off relationship between the key parameters must be carefully considered. In this paper, we present for the first time that the Superjunction (SJ) IGBT can deliver the best performance trade-offs between the conduction and turn-off losses while maintaining low leakage current at 200°C when compared with other IGBTs. Moreover, the output and switching characteristics of SJ IGBTs depend on the SJ pillar geometry and the doping level of the SJ pillars. We discover that the structure with disconnected p-body and p-pillar with moderate pillar doping concentration (D pn ) is the key in achieving excellent turn-off behavior without sacrificing the on-state voltage drop (V on ) at 200°C.