Journal ArticleDOI
1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance
Rongming Chu,Andrea Corrion,M. Chen,Ray Li,D. Wong,Daniel Zehnder,Brian Hughes,Karim S. Boutros +7 more
TLDR
In this paper, high-voltage GaN field-effect transistors fabricated on Si substrates were reported to have high breakdown voltage of 1200 V and low dynamic on-resistance at highvoltage operation.Abstract:
This letter reports high-voltage GaN field-effect transistors fabricated on Si substrates. A halide-based plasma treatment was performed to enable normally off operation. Atomic layer deposition of Al2O3 gate insulator was adopted to reduce the gate leakage current. Incorporation of multiple field plates, with one field plate connected to the gate electrode and two field plates connected to the source electrode successfully enabled a high breakdown voltage of 1200 V and low dynamic on-resistance at high-voltage operation.read more
Citations
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Journal ArticleDOI
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges
TL;DR: In this article, the characteristics and commercial status of both vertical and lateral GaN power devices are reviewed, providing the background necessary to understand the significance of these recent developments and the challenges encountered in GaN-based converter design, such as the consequences of faster switching on gate driver and board layout.
Journal ArticleDOI
Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Fabrizio Roccaforte,Patrick Fiorenza,Giuseppe Greco,Raffaella Lo Nigro,Filippo Giannazzo,Ferdinando Iucolano,Mario Saggio +6 more
TL;DR: In this article, the authors review some emerging trends in the processing of wide band gap (WBG) semiconductor devices (e.g., diodes, MOSFETs, HEMTs, etc.).
Journal ArticleDOI
600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse
TL;DR: In this paper, a 600-V normally-off SiNx/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) is reported.
Journal ArticleDOI
Tri-Gate Normally-Off GaN Power MISFET
TL;DR: The tri-gate normally-off GaN on-Si field effect transistor (MISFET) was proposed in this paper, achieving a breakdown voltage of 565 V at a drain leakage current of 0.6 μA/mm and Vgs = 0.80 ± 0.06 V.
Journal ArticleDOI
Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film
TL;DR: In this paper, an effective passivation technique for AlGaN/GaN high-electron-mobility transistors (HEMTs) was presented, which features an AlN thin film grown by plasma-enhanced atomic layer deposition (PEALD).
References
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Journal ArticleDOI
30-W/mm GaN HEMTs by field plate optimization
Yifeng Wu,Adam William Saxler,Marcia Moore,R.P. Smith,Scott Sheppard,P. Chavarkar,T. Wisleder,Umesh K. Mishra,P. Parikh +8 more
TL;DR: In this article, a GaN high-electron-mobility-transistors (HEMTs) on SiC were fabricated with field plates of various dimensions for optimum performance, and an enhancement in radio frequency (RF) current-voltage swings was achieved with acceptable compromise in gain, through both reduction in the trapping effect and increase in breakdown voltages.
Journal ArticleDOI
Gate Injection Transistor (GIT)—A Normally-Off AlGaN/GaN Power Transistor Using Conductivity Modulation
Yasuhiro Uemoto,Masahiro Hikita,Hiroaki Ueno,Hisayoshi Matsuo,Hidetoshi Ishida,Manabu Yanagihara,Tetsuzo Ueda,Tsuyoshi Tanaka,Daisuke Ueda +8 more
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
Journal ArticleDOI
High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment
TL;DR: In this paper, a novel approach was proposed to fabricate high-performance enhancement mode (E-mode) AlGaN/GaN HEMTs based on fluoride-based plasma treatment of the gate region.
Journal ArticleDOI
GaN Power Transistors on Si Substrates for Switching Applications
Nariaki Ikeda,Yuki Niiyama,Hiroshi Kambayashi,Yoshihiro Sato,Takehiko Nomura,Sadahiro Kato,Seikoh Yoshida +6 more
TL;DR: In this article, GaN power transistors on Si substrates for power switching application are reported, and current collapse phenomena are discussed for GaN-HFETs on Si substrate, resulting in suppression of the current collapse due to using the conducting Si substrate.
GaN Power Transistors on Si Substrates for Switching Applications Hybrid MOS-FET transistor devices with low on-resistance, high hold-voltages and high breakdown voltage promise to provide high-power, low-loss operation for switching applications.
Nariaki Ikeda,Yuki Niiyama,Hiroshi Kambayashi,Yoshihiro Sato,Takehiko Nomura,Sadahiro Kato,Seikoh Yoshida +6 more
TL;DR: A hybrid metal-oxide-semiconductor HFET structure is a promising candidate for obtaining devices with a lower on-resistance and a high breakdown voltage as well as one of the cost-effective solutions.