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Journal ArticleDOI

A Fully Integrated 0.13- $\mu$ m CMOS 40-Gb/s Serial Link Transceiver

TLDR
A fully integrated 40-Gb/s transceiver fabricated in a 0.13-mum CMOS technology performing half-rate clock and data recovery and a linear equalizer that tunes the resistive loading of an inductively-peaked CML buffer can improve the eye opening while operating at 39 Gb/s.
Citations
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Journal ArticleDOI

A 40 Gb/s Serial Link Transceiver in 28 nm CMOS Technology

TL;DR: A SerDes operating at 40 Gb/s optimized for chip-to-chip communication is presented and equalization consists of 2-tap feed-forward equalizers in both transmitter and receiver.
Journal ArticleDOI

A Fully-Integrated 40-Gb/s Transceiver in 65-nm CMOS Technology

TL;DR: This paper introduces a fully-integrated wireline transceiver operating at 40 Gb/s that incorporates a 5-tap finite-inpulse response (FIR) filter with LC-based delay lines precisely adjusted by a closed-loop delay controller.
Journal ArticleDOI

A 7.6 mW, 414 fs RMS-Jitter 10 GHz Phase-Locked Loop for a 40 Gb/s Serial Link Transmitter Based on a Two-Stage Ring Oscillator in 65 nm CMOS

TL;DR: A two-stage ring oscillator is used to provide a four-phase, 10 GHz clock for a quarter-rate TX, using a tri-state-inverter-based frequency-divider and an AC-coupled clock-buffer for high-speed operations with minimal power and area overheads.
Journal ArticleDOI

A Sub-2 W 39.8–44.6 Gb/s Transmitter and Receiver Chipset With SFI-5.2 Interface in 40 nm CMOS

TL;DR: The combined transmitter/receiver equalization enables 44.6 Gb/s data transmission using 231-1 PRBS at BER 10-12 over a channel with >21 dB loss at Nyquist frequency.
Journal ArticleDOI

A 50–64 Gb/s Serializing Transmitter With a 4-Tap, LC-Ladder-Filter-Based FFE in 65 nm CMOS Technology

TL;DR: A novel 4:1 multiplexer (MUX) is used as the final stage of the serializer to reduce power and a novel LC-based FFE structure is proposed to improve the bandwidth of the delay line and the output combiner.
References
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Journal ArticleDOI

10-Gb/s limiting amplifier and laser/modulator driver in 0.18-/spl mu/m CMOS technology

TL;DR: In this article, a limiting amplifier incorporating active feedback, inductive peaking, and negative Miller capacitance is proposed to achieve a voltage gain of 50 dB, a bandwidth of 9.4 GHz, and a sensitivity of 4.6 mV/sub pp/ for a bit-error rate of 10/sup -12/ while consuming 150 mW.
Journal ArticleDOI

A CMOS direct injection-locked oscillator topology as high-frequency low-power frequency divider

TL;DR: An injection-locked oscillator topology is presented, based on MOS switches directly coupled to the LC tank of well-known LC oscillators, which features wide locking ranges, a very low input capacitance, and highest frequency capability.
Journal ArticleDOI

A 40-GHz frequency divider in 0.18-/spl mu/m CMOS technology

TL;DR: In this article, a regenerative divide topology is introduced that employs resonance techniques by means of on-chip spiral inductors to tune out the device capacitances, achieving a frequency range of 2.3 GHz at 40 GHz while consuming 31 mW from a 2.5-V supply.
Journal ArticleDOI

A 10-Gb/s 5-Tap DFE/4-Tap FFE Transceiver in 90-nm CMOS Technology

TL;DR: In this paper, a 90-nm CMOS 10-Gb/s transceiver for chip-to-chip communications is presented, where a 5-tap decision feedback equalizer is included in the receiver and a 4-tap baud-spaced feed-forward equalizer (FFE) in the transmitter.
Journal ArticleDOI

A 10-Gb/s CMOS clock and data recovery circuit with a half-rate binary phase/frequency detector

TL;DR: In this paper, a 10-Gb/s phase-locked clock and data recovery circuit incorporating a multiphase LC oscillator and a half-rate phase/frequency detector with automatic data retiming is presented.
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