Journal ArticleDOI
A systematic study of DRIE process for high aspect ratio microstructuring
TLDR
In this article, the authors investigate the influence of etching gas flow, etching pressure, passivation gas pressure, ICP coil power, Platen power and etch and passivation time sequence on etch rate and side wall profile.About:
This article is published in Vacuum.The article was published on 2010-04-19. It has received 27 citations till now. The article focuses on the topics: Reactive-ion etching & Deep reactive-ion etching.read more
Citations
More filters
Journal ArticleDOI
Hybrid Integration of Magnetoresistive Sensors with MEMS as a Strategy to Detect Ultra-Low Magnetic Fields.
TL;DR: How magnetoresistive sensors can be integrated with microelectromechanical systems (MEMS) devices enabling the mechanical modulation of DC or low frequency external magnetic fields to high frequencies using MEMS structures incorporating magnetic flux guides is described.
Proceedings ArticleDOI
Maskless Direct Write Grayscale Lithography for MEMS Applications
TL;DR: This paper discusses a relatively novel approach to grayscale exposure using mask writing technology, using the Heidelberg DWL 66FS Laser Pattern Generator for binary exposure and the ability to vary laser intensity during an exposure.
Journal ArticleDOI
Silicon Micromachined D-Band Diplexer Using Releasable Filling Structure Technique
Xinghai Zhao,Oleksandr Glubokov,James Campion,Adrian Gomez-Torrent,Aleksandr Krivovitca,Umer Shah,Joachim Oberhammer +6 more
TL;DR: In this paper, a D-band waveguide diplexer, implemented by silicon micromachining using releasable filling structure (RFS) technique to obtain high-precision geometries, is presented.
Journal ArticleDOI
Fabrication of high aspect ratio silicon micro-structures based on aluminum mask patterned by IBE and RIE processing
TL;DR: In this paper, the effects of IBE and RIE on mask and further on HAR structures have been discussed, and the sample affected by IBE shows less critical dimensional loss, lower sidewall roughness, and higher aspect ratio than that by RIE.
Journal ArticleDOI
Si-based MEMS resonant sensor: A review from microfabrication perspective
TL;DR: In this paper, a detailed discussion has been carried out to understand critical steps involved in the fabrication of the silicon-based MEMS resonator and some challenges starting from the materials' selection to the final phase of obtaining a compact MEMS resonance device for its fabrication have been explored critically.
References
More filters
Journal ArticleDOI
Characterization of a Time Multiplexed Inductively Coupled Plasma Etcher
TL;DR: In this paper, the authors report the experimentally obtained response surfaces of silicon etching rate, aspect ratio dependent etching (ARDE), photoresist etch rate, and anisotropy parameter in a time multiplexed inductively coupled plasma etcher.
Journal ArticleDOI
Advanced etching of silicon based on deep reactive ion etching for silicon high aspect ratio microstructures and three-dimensional micro- and nanostructures
Frederic Marty,Lionel Rousseau,Bassam Saadany,Bruno Mercier,Olivier Français,Yoshio Mita,Tarik Bourouina +6 more
TL;DR: Different processes involving an inductively coupled plasma reactor either for deep reactive ion etching or for isotropic etching of silicon for photonic MEMS application is presented.
Proceedings ArticleDOI
Advanced silicon etching using high-density plasmas
Jy Bhardwaj,Huma Ashraf +1 more
TL;DR: In this paper, the authors present a novel room temperature advanced silicon etch process: >= 2 micrometers /min; >= 70:1 selectivity to resist (and >= 150:1 to oxide); up to 30:1 aspect ratio; 500 micrometer depth capability; using a non-toxic, non-corrosive environmentally acceptable fluorine-based chemistry.
Journal ArticleDOI
Profile control of high aspect ratio trenches of silicon. I. Effect of process parameters on local bowing
TL;DR: In this article, the authors investigated the effect of the process parameters (pressure, bias voltage, temperature, gas flow rates, etc.), and the mechanisms responsible for local bowing are discussed and evaluated.
Journal ArticleDOI
Profile control of high aspect ratio trenches of silicon. II. Study of the mechanisms responsible for local bowing formation and elimination of this effect
TL;DR: Boufnichel et al. as discussed by the authors presented a parametrical study of the evolution of local bowing as a function of the process conditions, and in particular the effect (influence) of the characteristics (nature, thickness, and side slope) on local bending.