Journal ArticleDOI
Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectric
Nan Wu,Qingchun Zhang,Chunxiang Zhu,D.S.H. Chan,Ming-Fu Li,N. Balasubramanian,Albert Chin,Dim-Lee Kwong +7 more
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TLDR
An alternative surface passivation process for high-k Ge metal-oxide-semiconductor (MOS) device has been studied in this paper, where surface SiH4 annealing was implemented prior to HfO2 deposition.Abstract:
An alternative surface passivation process for high-k Ge metal-oxide-semiconductor (MOS) device has been studied The surface SiH4 annealing was implemented prior to HfO2 deposition X-ray photoelectron spectroscopy analysis results show that the SiH4 surface passivation can greatly prevent the formation of unstable germanium oxide at the surface and suppress the Ge out-diffusion after the HfO2 deposition The electrical measurement shows that an equivalent oxide thickness of 135A and a leakage current of 116×10−5A∕cm2 at 1V gate bias was achieved for TaN∕HfO2∕Ge MOS capacitors with the SiH4 surface treatmentread more
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Journal ArticleDOI
Si–Ge–Sn alloys: From growth to applications
Stephan Wirths,Dan Buca,S. Mantl +2 more
TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.
Journal ArticleDOI
Germanium channel MOSFETs: opportunities and challenges
Huiling Shang,Martin M. Frank,Evgeni Gusev,J. O. Chu,Stephen W. Bedell,Kathryn W. Guarini,Meikei Ieong +6 more
TL;DR: CMOS-compatible integration approaches of Ge channel devices are presented and the device design and scalability of strained-Ge buried-channel MOSFETs are discussed.
Journal ArticleDOI
Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials
Marc Heyns,Wilman Tsai +1 more
TL;DR: In this paper, the International Technology Roadmap for Semiconductors (ITRS) indicates the requirements and technological challenges in the microelectronics industry in various technology nodes, and the major successes and remaining critical issues in the materials research on high-mobility channel materials for advanced CMOS devices are given in this issue of MRS Bulletin.
Journal ArticleDOI
Germanium surface passivation and atomic layer deposition of high-k dielectrics—a tutorial review on Ge-based MOS capacitors
Qi Xie,Shaoren Deng,Marc Schaekers,Dennis Lin,Matty Caymax,Annelies Delabie,Xin-Ping Qu,Yu-Long Jiang,Davy Deduytsche,Christophe Detavernier +9 more
TL;DR: In this article, a review of the most commonly used germanium surface passivation methods (e.g., epi-Si passivation, surface oxidation and/or nitridation, and S-passivation) with various high-k dielectrics is presented.
Journal ArticleDOI
Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
TL;DR: This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.
References
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Journal ArticleDOI
Elastic Scattering Corrections in AES and XPS. II. Estimating Attenuation Lengths and Conditions Required for their Valid Use in Overlayer/Substrate Experiments
Peter J. Cumpson,Martin P. Seah +1 more
TL;DR: In this article, the attenuation length is used to estimate the thickness of an overlayer in the presence of elastic scattering, and it is shown that using attenuation lengths eliminates most of the error due to elastic scattering without increasing the complexity of the quantification.
Journal ArticleDOI
Oxidation of Ge(100) and Ge(111) surfaces: an UPS and XPS study
K. Prabhakaran,Toshio Ogino +1 more
TL;DR: In situ and ex- situ oxidation studies are carried out on Ge(100) and Ge(111) employing techniques of ultraviolet and X-ray photoelectron spectroscopy (UPS and XPS) as mentioned in this paper.
Journal ArticleDOI
Germanium MOS capacitors incorporating ultrathin high-/spl kappa/ gate dielectric
TL;DR: In this article, the feasibility of integrating a high-permittivity gate dielectric material zirconium oxide into the MOS capacitors fabricated on pure germanium substrates was demonstrated.
Journal ArticleDOI
Effect of surface NH3 anneal on the physical and electrical properties of HfO2 films on Ge substrate
Nan Wu,Qingchun Zhang,Chunxiang Zhu,Chia Chin Yeo,S.J. Whang,D.S.H. Chan,M.F. Li,Byung Jin Cho,Albert Chin,Dim-Lee Kwong,Anyan Du,C.H. Tung,N. Balasubramanian +12 more
TL;DR: In this article, a surface annealing step in NH3 ambient before the HfO2 deposition could result in significant improvement in both gate leakage current and the equivalent oxide thickness (EOT).
Proceedings ArticleDOI
A sub-400/spl deg/C germanium MOSFET technology with high-/spl kappa/ dielectric and metal gate
TL;DR: In this article, a low thermal budget germanium MOS process with high/spl kappa/ gate dielectric and metal gate electrode has been demonstrated, and self-aligned surface-channel Ge p-MOSFETs with ZrO/sub 2/ gate have been demonstrated with equivalent oxide thickness (EOT) of 6-10 /spl Aring/ and platinum gate electrode.