Journal ArticleDOI
An accurate charge control model for spontaneous and piezoelectric polarization dependent two-dimensional electron gas sheet charge density of lattice-mismatched AlGaN/GaN HEMTs
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In this article, an improved charge control model for lattice mismatched AlGaN/GaN HEMTs is proposed, valid over the entire operating region, and the model for estimation of two-dimensional electron gas (2-DEG) sheet carrier concentration accounts for the strongly dominant spontaneous and piezoelectric polarization at the Al GaN/GAN heterointerface.Abstract:
The present paper proposes an improved charge control model of lattice-mismatched AlGaN/GaN HEMTs, valid over the entire operating region. The model for estimation of two-dimensional electron gas (2-DEG) sheet carrier concentration accounts for the strongly dominant spontaneous and piezoelectric polarization at the AlGaN/GaN heterointerface. The dependence of 2-DEG sheet carrier concentration on the aluminum composition and AlGaN layer thickness has been investigated in detail. Current–voltage characteristics developed from the 2-DEG model include the effect of field dependent mobility, velocity saturation and parasitic source/drain resistances. Close proximity with experimental data confirms the validity of the proposed model.read more
Citations
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References
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Journal ArticleDOI
Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures
Oliver Ambacher,Joseph A. Smart,James R. Shealy,Nils Weimann,K. Chu,M. J. Murphy,William J. Schaff,L.F. Eastman,Roman Dimitrov,L. Wittmer,Martin Stutzmann,W. Rieger,J. Hilsenbeck +12 more
TL;DR: In this article, the authors investigated the role of spontaneous and piezoelectric polarization on the carrier confinement at GaN/AlGaN and AlGaN/GaN interfaces.
Journal ArticleDOI
Trapping effects and microwave power performance in AlGaN/GaN HEMTs
Steven C. Binari,K. Ikossi,J.A. Roussos,Walter Kruppa,Doewon Park,Harry B. Dietrich,Daniel D. Koleske,Alma Wickenden,R. L. Henry +8 more
TL;DR: In this article, the dc small-signal and microwave power output characteristics of AlGaN/GaN HEMTs are presented, and it is demonstrated that gate lag is related to surface trapping and drain current collapse is associated with the properties of the GaN buffer layer.
Journal ArticleDOI
Emerging gallium nitride based devices
TL;DR: In this article, the status and future prospects of emerging wide bandgap gallium nitride semiconductor devices are discussed, and the promising features of double heterostructures in relation to possible current injection lasers, LED's, and photodetectors are also elaborated on.
Journal ArticleDOI
Metal-(n) AlGaAs-GaAs two-dimensional electron gas FET
D. Delagebeaudeuf,N.T. Linh +1 more
TL;DR: In this paper, a two-dimensional electron gas FET (TEGFET) constituted by a AlGaAs(n)-GaAs (n-or p-) heterostructure in which the Schottky gate is deposited on the top layer has been developed.
Journal ArticleDOI
High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates
Scott Sheppard,K. Doverspike,W.L. Pribble,Scott Allen,John W. Palmour,L.T. Kehias,T.J. Jenkins +6 more
TL;DR: In this paper, the performance of high-power GaN/Al/sub 0.86/N high-electron mobility transistors (HEMTs) fabricated on semi-insulating (SI) 4H-SiC substrates is reported.