Coexistence of memory and threshold resistive switching identified by combinatorial screening in niobium-tantalum system
Ivana Zrinski,Alexey Minenkov,Claudia Cancellieri,Cezarina Cela Mardare,Heiko Groiss,Achim Walter Hassel,Andrei Ionut Mardare +6 more
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TLDR
In this article , a combinatorial screening approach was used to reveal improved performance and memory characteristics of memristive devices by using an Nb-Ta thin film library, with a total compositional spread ranging between 13 and 80 at.% Ta alloy.About:
This article is published in Applied Surface Science.The article was published on 2022-12-01 and is currently open access. It has received 1 citations till now. The article focuses on the topics: Memristor & Tantalum.read more
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Controllable coexistence of threshold and non-volatile crosspoint memory for highly linear synaptic device applications
TL;DR: In this article, a high-k resistive cross-point memory was used for high-density NVM storage in large-scale cross-bar array in future neuromorphic computing applications.
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