Journal ArticleDOI
Design Consideration in High Temperature Analog CMOS Integrated Circuits
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TLDR
The design of CMOS analog integrated circuits to operate at elevated junction temperatures is discussed in this article, where simple models and high-temperature trends represent sufficient information for first-order hand analysis prior to computeraided design.Abstract:
The design of CMOS analog integrated circuits to be operated at elevated junction temperatures is discussed. Considerations which have successfully been implemented in the design of basic analog cells for operation over the 25°-250°C range are emphasized. Simple models arc presented along with the temperature dependencies of key design parameters. These models and high-temperature trends represent sufficient information for first-order hand analysis prior to computeraided design.read more
Citations
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Journal ArticleDOI
Mutual compensation of mobility and threshold voltage temperature effects with applications in CMOS circuits
Igor M. Filanovsky,Ahmed Allam +1 more
TL;DR: In this paper, the conditions under which this effect occurs, and stability of this bias point are investigated, and verified experimentally investigating the temperature behavior of a simple voltage reference circuit realized in 0.35 /spl mu/m CMOS process.
Journal ArticleDOI
Design of SOI CMOS operational amplifiers for applications up to 300/spl deg/C
TL;DR: In this article, design guidelines using two analog parameters (Early voltage and transconductance to drain current ratio) are proposed for correct operation of silicon-on-insulator (SOI) CMOS operational amplifiers (opamp) at elevated temperature up to 300/spl deg/C.
Journal ArticleDOI
A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive
Zhiqiang Wang,Xiaojie Shi,Leon M. Tolbert,Fred Wang,Zhenxian Liang,Daniel Costinett,Benjamin J. Blalock +6 more
TL;DR: In this article, a board-level integrated silicon carbide (SiC) mosfet power module for high temperature and high power density application is presented, where a silicon-on-insulator (SOI)-based gate driver capable of operating at 200 °C ambient temperature is designed and fabricated.
Journal ArticleDOI
High-temperature silicon-on-insulator electronics for space nuclear power systems: requirements and feasibility
TL;DR: In this paper, the authors performed a study to determine whether silicon very large-scale integrated circuits (VLSICs) can survive the high temperature and total-dose radiation environments (up to 10 Mrad over a 7-10y system life) projected for a very high power space nuclear reactor platform.
Journal ArticleDOI
High-temperature electrical characteristics of GaAs MESFETs (25-400 degrees C)
F.S. Shoucair,P.K. Ojala +1 more
TL;DR: In this article, the effects of elevated ambient and substrate temperatures (25 degrees C up to 400 degrees C) on the electrical characteristics of integrated GaAs MESFETs in a state-of-theart commercial technology are reported.
References
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Operation and modeling of the MOS transistor
TL;DR: In this article, the MOS transistors with ION-IMPLANTED CHANNELS were used for CIRCUIT SIMULATION in a two-and three-tier MOS structure.
Journal ArticleDOI
Matching properties, and voltage and temperature dependence of MOS capacitors
TL;DR: In this article, the matching properties of MOS capacitors are modeled and compared with measured data, and a weighted-capacitor array design approach is described, where the voltage and temperature dependence of capacitors were analyzed, modeled, and compared.
Journal ArticleDOI
A new NMOS temperature-stable voltage reference
TL;DR: In this paper, an NMOS voltage reference was developed that exhibits extremely low drift with temperature, which is based on the difference between the gate/source voltages of enhancement and depletion-mode NMOS transistors.